2N3468L

TECHNICAL DATA

PNP SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/348

Devices Qualified Level

2N3467

2N3467L

2N3468

2N3468L

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings Symbol

2N3467

2N3467L

2N3468

2N3468L

Unit

Collector-Emitter Voltage

V

CEO

40 50 Vdc

Collector-Base Voltage

V

CBO

40 50 Vdc

Emitter-Base Voltage

V

EBO

5.0 Vdc

Collector Current

I

C

1.0 Adc

Total Power Dissipation @ T

A

= +25

0

C

(1)

@ T

C

= +25

0

C

(2)

P

T

1.0

5.0

W

W

Operating & Storage Junction Temperature Range

T

op

,

T

stg

-55 to +175

0

C

1) Derate linearly 5.71 mW/

0

C for T

A

> +25

0

C

2) Derate linearly 28.6 mW/

0

C for T

C

> +25

0

C

TO-39* (TO-205AD)

2N3467, 2N3468

TO-5*

2N3467L, 2N3468L

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I

C

= 10 mAdc 2N3467, L

2N3468, L

V

(BR)

CBO

40

50

Vdc

Emitter-Base Breakdown Current

I

E

= 10 µAdc

V

(BR)

EBO

5.0

Vdc

Collector-Emitter Breakdown Current

I

C

= 10 mAdc 2N3467, L

2N3468, L

V

(BR)

CEO

40

50

Vdc

Collector-Base Cutoff Current

V

CB

= 30 Vdc

I

CBO

100

ηAdc

Collector-Emitter Cutoff Current

V

EB

= 3.0 Vdc, V

CE

= 30

I

CEX

100 nAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N3467, L, 2N3468, L, JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

I

C

=150 mAdc, V

CE

= 1.0 Vdc 2N3467, L

2N3468, L

I

C

= 500 mAdc, V

CE

= 1.0 Vdc 2N3467, L

2N3468, L

I

C

= 1.0 Adc, V

CE

= 5.0 Vdc 2N3467, L

2N3468, L

h

FE

40

25

40

25

40

25

120

75

Collector-Emitter Saturation Voltage

I

C

= 150 mAdc, I

B

= 15 mAdc

I

C

= 500 mAdc, I

B

= 50 mAdc

I

C

= 1.0 Adc, I

B

= 100 mAdc

V

CE(sat)

0.35

0.6

1.2

Vdc

Base-Emitter Saturation Voltage

I

C

= 150 mAdc, I

B

= 15 mAdc

I

C

= 500 mAdc, I

B

= 50 mAdc

I

C

= 1.0 Adc, I

B

= 100 mAdc

V

BE(sat)

0.8

1.0

1.2

1.6

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

V

CB

= 10 Vdc, I

E

= 0, 100 kHz ≤ f ≤ 1.0 MHz

C

obo

25 pF

Extrapolated Unity Gain Frequency

I

C

= 50 mAdc, V

CE

= 10 Vdc, f = 100NHz

2N3467, L

2N3468, L

f

t

175

150

500

500

MHz

Input Capacitance

V

EB

= 0.5 Vdc, I

C

= 0, 100 kHz ≤ f ≤ 1.0 MHz

C

ibo

100 pF

SWITCHING CHARACTERISTICS

Delay Time

I

C

= 500 mAdc, I

B1

= 50 mAdc, V

EB

= 2

t

d

10 ns

Rise Time

I

C

= 500 mAdc, I

B1

= 50 mAdc, V

EB

= 2

t

r

30 ns

Storage Time

I

C

= 500 mAdc, I

B1

= I

B2

= 50 mAdc

t

s

60 ns

Fall Time

I

C

= 100 mAdc, I

B1

= I

B2

= 50 mAdc

t

f

30 ns

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

2N3468L

Mfr. #:

Manufacturer:

Microchip / Microsemi

Description:

Bipolar Transistors - BJT Power BJT

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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