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STD100N03LT4

P1-P3P4-P6P7-P9P10-P12P13-P15
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Electrical characteristics STD100N03L - STD100N03L-1
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2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0
30 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±200 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
1V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 40A
V
GS
= 5V, I
D
= 20A
0.0045
0.008
0.0055
0.01
Ω
Ω
V
GS
= 10 V,
I
D
= 40 A @125°C
V
GS
= 5 V,
I
D
= 20 A @125°C
0.0068
0.0146
Ω
Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
= 10 V
,
I
D
= 15A 31 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
2060
728
67
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 24V, I
D
= 80A
V
GS
= 5V
Figure 15 on page 9
20
7
7.5
27 nC
nC
nC
R
G
Gate input resistance
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
1.9 Ω
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STD100N03L - STD100N03L-1 Electrical characteristics
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Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 15V, I
D
= 40A,
R
G
=4.7Ω, V
GS
=10V
Figure 14 on page 9
9
205
31
35
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 80 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 320 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 40A, V
GS
= 0
1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80A,
di/dt = 100A/µs,
V
DD
= 25V, T
J
= 150°C
Figure 16 on page 9
40
40
2
ns
µC
A
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Electrical characteristics STD100N03L - STD100N03L-1
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P15

STD100N03LT4

Mfr. #:
Buy STD100N03LT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 V 0.0045 Ohm 80 A Planar STripFET
Lifecycle:
New from this manufacturer.
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