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FDZ4010

P1-P3P4-P6P7-P9P10-P12P13-P13
www.fairchildsemi.com
4
©2013 Fairchild Semiconductor Corporation
FDZ4010 Rev.C4
FDZ4010
Absolute Maximum Ratings
Characteristics Min. Max. Unit
V
IN
, V
OUT
to GND -0.3 6 V
V
EN1
,V
EN2
to GND -0.3 6 V
Continuous Output Current 20 mA
Junction Temperature (T
J
) 150
o
C
Storage Temperature Range (T
STG
) -65 150
o
C
Thermal Resistance, Junction to Ambient (
JA
) (Note 1b) 312 °C/W
Electrostatic Discharge
Human Body Model, ANSI/ESDA/
JEDEC JS-001-2012
5
kV
Charged Device Model, JESD22-
C101
2
Recommended Operating Conditions
Characteristics Symbol Min. Max. Unit
IN Voltage V
IN
2 5V
OUT Current, V
IN
= 3.3 V ,
V
EN1
= V
EN2
= 3.3 V
I
OUT
10 mA
EN1, EN2 Voltage V
EN1 ,
V
EN2
5V
Operating Temperature Range -40 85
o
C
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
suface of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user’s board design.
a. 115 °C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b. 312 °C/W when mounted on a
minimum pad of 2 oz copper.
INF
INS
OUTF
OUTS
INF
INS
OUTF
OUTS
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5
©2013 Fairchild Semiconductor Corporation
FDZ4010 Rev.C4
FDZ4010
Electrical Characteristics V
IN
= 2 V to 5 V, T
J
= 25
o
C , unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
Input High Voltage, EN1, EN2
V
IN
= 2.5 V to 5 V and across
temperature range
1.375 V
V
IH
Input High Voltage, EN1, EN2 V
IN
= 2 V and across temperature range 1.525 V
V
IL
Input Low Voltage, EN1, EN2
V
IN
= 2 V to 5 V and across temperature
range
0.95 V
R
EN
Pull Down Resistance at EN1, EN2
V
EN1
= V
EN2
= 1 V and across
temperature range
70 100 130 k
C
EN
Input Capacitance of EN1, EN2
f = 1 MHz and across temperature range
(Note 2)
10 pF
R
DS(ON)
On-Resistance of Pch MOSFET I
OUT
= 10 mA, V
IN
= 2 V to 5 V 1.5
I
Q
Quiescent Current
V
IN
= 5 V, V
EN1
= V
EN2
= 5 V,
V
OUT
floating (I
OUT
= 0),
Across temperature range
500 A
I
SD
Shutdown Current
V
IN
= 3.3 V, V
EN1
= V
EN2
= 0 V,
V
OUT
floating (I
OUT
= 0),
Across temperature range
1 A
V
IN
= 3.3 V,
V
EN1
= 825 mV & V
EN2
= 425 mV,
V
EN1
= 425 mV & V
EN2
= 825 mV,
V
OUT
floating (I
OUT
= 0),
Across temperature range
10
A
R
OUT
Pull Down Resistance at OUT Pin V
EN1
= V
EN2
= 0 V 1 1.3 k
t
on
Turn-On Time Load Impedance,
V
IN
= 3.3 V,
C
L
= 50 pF, R
L
= 500
V
EN1
= V
EN2
= 0 V to 2.3 V,
(500 ns rise time)
1
s
t
r
Turn-On Rise Time 0.95 s
t
off
Turn-Off Time 2 s
t
f
Turn-Off Fall Time 2 s
Figure 4. Timing Diagram
Notes:
2. Guaranteed by characterization and design
www.fairchildsemi.com
6
©2013 Fairchild Semiconductor Corporation
FDZ4010 Rev.C4
FDZ4010
Typical Characteristics (Continued)
Figure 5. Quiescent Current vs Temperature Figure 6. Quiescent Current vs Supply Voltage
Figure 7. Shutdown Current vs Temperature Figure 8. Shutdown Current vs Supply Voltage
Figure 9. Shutdown Current vs Temperature Figure 10. Shutdown Current vs Temperature
-50 -25 0 25 50 75 100
200
250
300
350
400
V
EN1
= V
EN2
= 5.0 V
V
IN
= 5.0 V
V
OUT
= Floating
SUPPLY CURRENT ( A)
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0 2.5 3.0 3.5 4.0 4.5 5.0
100
150
200
250
300
350
V
EN1
= V
EN2
= V
IN
T
A
= 25
o
C
SUPPLY CURRENT ( A)
SUPPLY VOLTAGE (V)
-50 -25 0 25 50 75 100
0
20
40
60
80
V
EN1
= 0 V
V
EN2
= 0 V
V
IN
= 3.3 V
SHUTDOWN CURRENT (nA)
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0 2.5 3.0 3.5 4.0 4.5 5.0
2
4
6
8
V
EN1
= 0 V
V
EN2
= 0 V
T
A
= 25
o
C
SHUTDOWN CURRENT ( A)
SUPPLY VOLTAGE (V)
-50 -25 0 25 50 75 100
1
2
3
4
V
EN1
= 425 mV
V
EN2
= 825 mV
V
IN
= 3.3 V
SHUTDOWN CURRENT ( A)
T
J
, JUNCTION TEMPERATURE (
o
C)
-50 -25 0 25 50 75 100
1
2
3
4
V
EN1
= 825 mV
V
EN2
= 425 mV
V
IN
= 3.3 V
SHUTDOWN CURRENT ( A)
T
J
, JUNCTION TEMPERATURE (
o
C)
P1-P3P4-P6P7-P9P10-P12P13-P13

FDZ4010

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ON Semiconductor
Description:
IC POWER MANAGEMENT
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