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BYVB32-200HE3/45

P1-P3P4-P5
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88558
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common-Cathode Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
18 A
V
RRM
50 V to 200 V
I
FSM
150 A
t
rr
25 ns
V
F
0.85 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
BYV32 Series
ITO-220AB
BYVB32 Series
PIN 1
PIN 2
K
HEATSINK
1
2
3
BYVF32 Series
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
1
2
K
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 V
Maximum RMS voltage V
RMS
35 70 105 140 V
Maximum DC blocking voltage V
DC
50 100 150 200 V
Maximum average forward rectified current at T
C
= 125 °C I
F(AV)
18 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150 A
Operating storage and temperature range T
J
, T
STG
-65 to +150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 88558
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT
Maximum instantaneous forward
voltage per diode
I
F
= 20 A T
J
= 25 °C
V
F
(1)
1.15
V
F
= 5.0 A T
J
= 100 °C 0.85
Maximum DC reverse current
per diode
at rated DC blocking voltage
T
J
= 25 °C
I
R
10
μA
T
J
= 100 °C 600
Maximum reverse recovery time
per diode
I
F
= 1 A, V
R
= 30 V
dI/dt = 100 A/μs, I
rr
= 10 % I
RM
t
rr
25 ns
Typical junction capacitance
per diode
4.0 V, 1 MHz C
J
45 pF
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYV BYVF BYVB UNIT
Typical thermal resistance from junction to case per diode R
JC
1.6 5.0 1.6 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB BYV32-200-E3/45 1.85 45 50/tube Tube
ITO-220AB BYVF32-200-E3/45 1.97 45 50/tube Tube
TO-263AB BYVB32-200-E3/45 1.35 45 50/tube Tube
TO-263AB BYVB32-200-E3/81 1.35 81 800/reel Tape and reel
TO-220AB BYV32-200HE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB BYVF32-200HE3/45
(1)
1.97 45 50/tube Tube
TO-263AB BYVB32-200HE3/45
(1)
1.35 45 50/tube Tube
TO-263AB BYVB32-200HE3/81
(1)
1.35 81 800/reel Tape and reel
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 88558
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
F i g . 2 - M a x i mu m N o n- R e p et i t i ve P e ak F o r wa r d S u rg e C u rr e n t
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
0
4
16
18
20
0
7525 50
100 125
150
8
Average Forward Rectied Current (A)
12
Case Ambient Temperature (°C)
Resistive or Inductive Load
0
75
100
125
50
25
150
1
100
10
Number of Cycles at 50 Hz
Peak Forward Surge Current (A)
T
J
= 150 °C
10 ms Single Half Sine-Wave
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
0.1 0.3 1.1 1.30.5 0.7 0.9
Instantaneous Forward Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
1
10
100
200 10040 60 80
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
C
= 25 °C
T
C
= 100 °C
1
100
10
0
20
30
40
50
60
10
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
P1-P3P4-P5

BYVB32-200HE3/45

Mfr. #:
Buy BYVB32-200HE3/45
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200 Volt 18A 25ns Dual Common Cathode
Lifecycle:
New from this manufacturer.
Delivery:
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