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MJD42CRLG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 13
1 Publication Order Number:
MJD41C/D
MJD41C(NPN),
MJD42C(PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Electrically Similar to Popular TIP41 and TIP42 Series
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage V
CEO
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous
I
C
6 Adc
Collector Current − Peak I
CM
10 Adc
Base Current I
B
2 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS, 20 WATTS
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
J4xC = Device Code
x = 1 or 2
G = Pb−Free Package
AYWW
J4xCG
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AYWW
J4xCG
www.onsemi.com
DPAK IPAK
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
2
3
4
1
2
3
4
MJD41C (NPN), MJD42C (PNP)
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
71.4 °C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 30 mAdc, I
B
= 0)
V
CEO(sus)
100 −
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
I
CEO
− 50
mAdc
Collector Cutoff Current
(V
CE
= 100 Vdc, V
EB
= 0)
I
CES
− 10
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 0.5
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 4 Vdc)
(I
C
= 3 Adc, V
CE
= 4 Vdc)
h
FE
30
15
−
75
−
Collector−Emitter Saturation Voltage
(I
C
= 6 Adc, I
B
= 600 mAdc)
V
CE(sat)
− 1.5
Vdc
Base−Emitter On Voltage
(I
C
= 6 Adc, V
CE
= 4 Vdc)
V
BE(on)
− 2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
3 −
MHz
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz)
h
fe
20 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. f
T
= ⎪h
fe
⎪• f
test
.
MJD41C (NPN), MJD42C (PNP)
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0.06
I
C
, COLLECTOR CURRENT (AMP)
0.2 0.4 4
20
7
500
h
FE
, DC CURRENT GAIN
V
CE
= 2 V
T
J
= 150°C
70
0.3 1
25°C
-55°C
10
0.1
0.6 2 6
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
50 75 100 125 150
15
10
T
C
5
20
P
D
, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Test Circuit
2
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
t, TIME (s)μ
1
0.7
0.5
0.3
0.2
t
r
0.1
0.07
0.05
0.03
t
d
@ V
BE(off)
≈ 5 V
Figure 3. DC Current Gain
2.5
0
1.5
1
T
A
0.5
2
300
200
100
50
30
5
0.02
0.06 0.2 0.4 41
0.1
0.6 2 6
Figure 4. Turn−On Time
+11 V
25 ms
0
-9 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
MSB5300 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
T
C
T
A
SURFACE MOUNT
Figure 5. Base Emitter Voltage vs. Collector
Current
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1010.10.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
BE(ON)
, BASE−EMITTER VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 4 V
T
A
= 150°C
80°C
25°C
−40°C
−55°C
I
C
/I
B
= 10
T
A
= 150°C
80°C
25°C
−40°C
−55°C
P1-P3P4-P6P7-P7

MJD42CRLG

Mfr. #:
Buy MJD42CRLG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 6A 100V 20W PNP
Lifecycle:
New from this manufacturer.
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