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MJD42CRL

P1-P3P4-P6P7-P7
MJD41C (NPN), MJD42C (PNP)
www.onsemi.com
4
TYPICAL CHARACTERISTICS
6
I
C
, COLLECTOR CURRENT (AMP)
0.1
t, TIME (s)μ
5
3
2
1
0.7
0.5
0.3
0.2
0.06 0.2 0.4 41
0.1
0.6 2
Figure 7. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 8. Turn−Off Time
0.07
0.05
I
C
, COLLECTOR CURRENT (A)
1010.10.01
0
0.1
0.2
0.3
0.6
0.7
0.9
V
CE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.4
0.5
0.8
1.0
I
C
/I
B
= 10
T
A
= 150°C
80°C
25°C
−40°C
and −55°C
t
s
t
f
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
C, CAPACITANCE (pF)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
t, TIME (ms)
0.01
0.01 0.05 1 2 5 10 20 50 100 200 5000.1 0.50.2 100
0
0.03 0.3 3 30 3000.02
2.5 A
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (mA)
1.2
0.4
0
10
2
0.8
T
J
= 25°C
1.6
I
C
= 1 A
Figure 10. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
C
ob
0.5
50
2 5 20 50
1
0.2
0.1
0.05
r(t), EFFECTIVE TRANSIENT THERMAL
R
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
Figure 11. Thermal Response
0.5
D = 0.5
5 A
1000500300200100503020
300
30
70
100
200
1 3 10 30
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
T
J
= 25°C
C
ib
MJD41C (NPN), MJD42C (PNP)
www.onsemi.com
5
I
C
, COLLECTOR CURRENT (AMP)
10
70
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
10
0
1
0.3
3
0.1
0.03
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Figure 12. Maximum Forward Bias
Safe Operating Area
T
C
= 25°C SINGLE PULSE
T
J
= 150°C
dc
0.5
2
5
1ms
MJD41C, 42C
5030201075321
0.05
100ms
CURVES APPLY BELOW RATED V
CEO
5ms
500ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
ORDERING INFORMATION
Device Package Type Package Shipping
†
MJD41CRLG DPAK
(Pb−Free)
369C 1,800 / Tape & Reel
MJD41CT4G DPAK
(Pb−Free)
369C 2,500 / Tape & Reel
NJVMJD41CT4G* DPAK
(Pb−Free)
369C 2,500 / Tape & Reel
MJD42CG DPAK
(Pb−Free)
369C 75 Units / Rail
MJD42C1G IPAK
(Pb−Free)
369D 75 Units / Rail
MJD42CRLG DPAK
(Pb−Free)
369C 1,800 / Tape & Reel
NJVMJD42CRLG* DPAK
(Pb−Free)
369C 1,800 / Tape & Reel
MJD42CT4G DPAK
(Pb−Free)
369C 2,500 / Tape & Reel
NJVMJD42CT4G* DPAK
(Pb−Free)
369C 2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
MJD41C (NPN), MJD42C (PNP)
www.onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
b
D
E
b3
L3
L4
b2
e
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
P1-P3P4-P6P7-P7

MJD42CRL

Mfr. #:
Buy MJD42CRL
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 100V 6A DPAK
Lifecycle:
New from this manufacturer.
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