APT34F100B2 Datasheet APT34F100B2, APT34F100L | P1-P3

N-Channel FREDFET

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Single die FREDFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

oz

g

in·lbf

N·m

Ratings

35

21

140

±30

2165

18

Min Typ Max

1135

0.11

-55 150

300

0.22

6.2

10

1.1

Parameter

Continuous Drain Current @ T

C

= 25°C

Continuous Drain Current @ T

C

= 100°C

Pulsed Drain Current

1

Gate-Source Voltage

Single Pulse Avalanche Energy

2

Avalanche Current,

Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

C

= 25°C

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-264 Package), 4-40 or M3 screw

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

R

θ

JC

R

θ

CS

T

J

,T

STG

T

L

W

T

Torque

Microsemi Website - http://www.microsemi.com

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• PFC and other boost converter

• Buck

converter

• Single and two switch forward

• Flyback

FEATURES

• Fast switching with low EMI

• Low t

rr

for high reliability

• Ultra low C

rss

for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

TO-264

T-Max

®

APT34F100B2

APT34F100L

1000V, 35A, .38Ω Max t

rr

≤300ns

APT34F100B2

APT34F100L

Power MOS 8

™

is a high speed, high voltage N-channel switch-mode power MOSFET.

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t

rr

, soft

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C

rss

/C

iss

result in excellent noise immunity and low switching loss. The

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

050-8123 Rev D 8-2011

Static Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Dynamic Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Source-Drain Diode Characteristics

1

Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2

Starting at T

J

= 25°C, L = 13.36mH, R

G

= 25Ω, I

AS

= 18A.

3

Pulse test: Pulse Width < 380μs, duty cycle < 2%.

4

C

o(cr)

is deﬁ ned as a ﬁ xed capacitance with the same stored charge as C

OSS

with V

DS

= 67% of V

(BR)DSS

.

5 C

o(er)

is deﬁ ned as a ﬁ xed capacitance with the same stored energy as C

OSS

with V

DS

= 67% of V

(BR)DSS

. To calculate C

o(er)

for any value of

V

DS

less than V

(BR)DSS,

use this equation: C

o(er)

= -2.85E-7/V

DS

^2 + 5.04E-8/V

DS

+ 9.75E-11.

6

R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

Unit

V

V/°C

Ω

V

mV/°C

μA

nA

Unit

S

pF

nC

ns

Unit

A

V

ns

μC

A

V/ns

Min Typ Max

1000

1.15

0.32 0.38

2.5 4 5

-10

250

1000

±100

Min Typ Max

35

140

1.

2

300

650

1.61

4.21

11.6

15.8

25

Min Typ Max

39

9835

130

825

335

170

305

55

145

39

40

150

38

Test Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 250μA

V

GS

= 10V, I

D

= 18A

V

GS

= V

DS

, I

D

= 2.5mA

V

DS

= 1000V T

J

= 25°C

V

GS

= 0V T

J

= 125°C

V

GS

= ±30V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

SD

= 18A, T

J

= 25°C, V

GS

= 0V

T

J

= 25°C

T

J

= 125°C

I

SD

= 18A

3

T

J

= 25°C

V

DD

= 100V T

J

= 125°C

di

SD

/dt = 100A/μs T

J

= 25°C

T

J

= 125°C

I

SD

≤ 18A, di/dt ≤1000A/μs, V

DD

= 667V,

T

J

= 125°C

Test Conditions

V

DS

= 50V, I

D

= 18A

V

GS

= 0V, V

DS

= 25V

f = 1MHz

V

GS

= 0V, V

DS

= 0V to 667V

V

GS

= 0 to 10V, I

D

= 18A,

V

DS

= 500V

Resistive Switching

V

DD

= 667V, I

D

= 18A

R

G

= 2.2Ω

6

, V

GG

= 15V

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefﬁ cient

Drain-Source On Resistance

3

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefﬁ cient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

1

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Parameter

Forward Transconductance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance, Charge Related

Effective Output Capacitance, Energy Related

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Current Rise Time

Turn-Off Delay Time

Current Fall Time

Symbol

V

BR(DSS)

∆V

BR(DSS)

/∆T

J

R

DS(on)

V

GS(th)

∆V

GS(th)

/∆T

J

I

DSS

I

GSS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt

Symbol

g

fs

C

iss

C

rss

C

oss

C

o(cr)

4

C

o(er)

5

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

050-8123 Rev D 8-2011

APT34F100B2_L

V

GS

= 6, 7, 8 & 9V

4.5V

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

= 10V

5V

V

DS

> I

D(ON)

x R

DS(ON)

MAX.

250μSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

GS

= 10V @ 18A

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

C

oss

C

iss

I

D

= 18A

V

DS

= 800V

V

DS

= 200V

V

DS

= 500V

T

J

= 150°C

T

J

= 25°C

T

J

= 125°C

T

J

= 150°C

C

rss

T

J

= 125°C

T

J

= 25°C

T

J

= -55°C

V

GS

, GATE-TO-SOURCE VOLTAGE (V) g

fs

, TRANSCONDUCTANCE R

DS(ON)

, DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (A)

I

SD,

REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) I

D

, DRAIN CURRENT (A) I

D

, DRIAN CURRENT (A)

V

DS(ON)

, DRAIN-TO-SOURCE VOLTAGE (V) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1, Output Characteristics Figure 2, Output Characteristics

T

J

, JUNCTION TEMPERATURE (°C) V

GS

, GATE-TO-SOURCE VOLTAGE (V)

Figure 3, R

DS(ON)

vs Junction Temperature Figure 4, Transfer Characteristics

I

D

, DRAIN CURRENT (A) V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage

Q

g

, TOTAL GATE CHARGE (nC) V

SD

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

0 5 10 15 20 25 30 0 5 10 15 20 25 30

-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8

0 5 10 15 20 25 0 200 400 600 800 1000

0 50 100 150 200 250 300 350 400 0 0.3 0.6 0.9 1.2 1.5

100

80

60

40

20

0

3.0

2.5

2.0

1.5

1.0

0.5

0

50

40

30

20

10

0

16

14

12

10

8

6

4

2

0

35

30

25

20

15

10

5

0

140

120

100

80

60

40

20

0

20,000

10,000

1000

100

10

140

120

100

80

60

40

20

0

APT34F100B2_L

050-8123 Rev D 8-2011

APT34F100B2

APT34F100B2

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