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SI1079X-T1-GE3

P1-P3P4-P6P7-P8
Si1079X
www.vishay.com
Vishay Siliconix
S14-1436-Rev. A, 14-Jul-14
4
Document Number: 62966
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
2
4
6
8
10
0 5 10 15 20
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 15 V
V
DS
= 8 V
I
D
= 1.4 A
0.1
1
10
0.0 0.3 0.6 0.9 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.3
0.5
0.7
0.9
1.1
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
0.6
1
1.4
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
-On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V; 1.4A/
V
GS
= 2.5 V; 0.7 A
0
3
6
9
12
0.001 0.01 0.1 1 10 100
Power (W)
Time (s)
Si1079X
www.vishay.com
Vishay Siliconix
S14-1436-Rev. A, 14-Jul-14
5
Document Number: 62966
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area, Junction-to-Ambient Power Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62966
.
0.001
0.01
0.1
1
10
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-S ource Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 μs
1 s
DC, 10s
Limited by I
DM
0
0.07
0.14
0.21
0.28
0.35
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 450 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Package Information
www.vishay.com
Vishay Siliconix
Revision: 11-Aug-14
1
Document Number: 71612
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-89 6-Leads (SOT-563F)
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
6
4
32
4
32
5
4
Caaa
C
M
ddd
A–B D
2x
e
B
6x b
Caaa
2x
D
E/2
E
Cbbb
2x
123
654
E1
E1/2
A
D
e1
L1
L
A
B
C
A1
A1
SECTION B-B
DETAIL “A”
SEE DETAIL “A”
DIM.
MILLIMETERS
MIN. NOM. MAX.
A 0.56 0.58 0.60
A1 0 0.02 0.10
b 0.15 0.22 0.30
c 0.10 0.14 0.18
D 1.50 1.60 1.70
E 1.50 1.60 1.70
E1 1.15 1.20 1.25
e 0.45 0.50 0.55
e1 0.95 1.00 1.05
L 0.25 0.35 0.50
L1 0.10 0.20 0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
P1-P3P4-P6P7-P8

SI1079X-T1-GE3

Mfr. #:
Buy SI1079X-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 12V Vgs SC89-6
Lifecycle:
New from this manufacturer.
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