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MMBTA06WT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 4
1 Publication Order Number:
MMBTA06WT1/D
MMBTA06W, SMMBTA06W,
Driver Transistor
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating: Human Body Model − 4 kV
ESD Rating: Machine Model − 400 V
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Collector−Base Voltage V
CBO
80 Vdc
Emitter−Base Voltage V
EBO
4.0 Vdc
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
T
A
= 25°C
P
D
150
mW
Thermal Resistance,
Junction to Ambient
R
q
JA
833
°C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MMBTA06WT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
GM MG
G
GM = Specific Device Code
M = Date Code
G = Pb−Free Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
SMMBTA06WT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
SMMBTA06WT3G SC−70
(Pb−Free)
10,000 /
Tape & Reel
MMBTA06W, SMMBTA06W,
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
80 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mAdc, I
C
= 0)
V
(BR)EBO
4.0 −
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
I
CES
− 0.1
mAdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
− 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
h
FE
100
100
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
− 0.25
Vdc
Base−Emitter On Voltage
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
− 1.2
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 10 mA, V
CE
= 2.0 V, f = 100 MHz)
f
T
100 −
MHz
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURN-ON TIME
-1.0 V
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME
+V
BB
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
MMBTA06W, SMMBTA06W,
http://onsemi.com
3
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
Figure 4. Switching Time
100 2002.0
I
C
, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
10 1000.1
V
R
, REVERSE VOLTAGE (VOLTS)
80
60
40
20
10
8.0
20
V
CE
= 2.0 V
T
J
= 25°C
T
J
= 25°C
3.0 5.0 7.0 10 20 30 50 70
f
T
, CURRENT-GAIN - BANDWIDTH PRODUCT (MH
z
501.0 2.0 5.00.2 0.5
6.0
4.0
C
ibo
C
obo
2010
I
C
, COLLECTOR CURRENT (mA)
200
100
50
20
10
100
t, TIME (ns)
50
200 500
1.0 k
500
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
t
r
5.0 7.0
30
70
300
700
30 70
t
d
@ V
BE(off)
= 0.5 V
C, CAPACITANCE (pF)
300
Figure 5. Active−Region Safe Operating Area
101.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
200
100
50
20
10
30
I
C
, COLLECTOR CURRENT (mA)
2.0 5.0 50
1.0 k
1.0 ms
1.0 s
T
A
= 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10070203.0 7.0
100 ms
T
C
= 25°C
700
300
30
70
Figure 6. DC Current Gain
2.0 5000.5
I
C
, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
10
, DC CURRENT GAIN
T
J
= 125°C
1.0 3.0 5.0
V
CE
= 1.0 V
20 10030 50 200 300
h
FE
25°C
-55°C
Figure 7. “ON” Voltages
10 5001.0
I
C
, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
100
T
J
= 25°C
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
0.5 2.0 5.0 20020 50
P1-P3P4-P5

MMBTA06WT1G

Mfr. #:
Buy MMBTA06WT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 80V NPN
Lifecycle:
New from this manufacturer.
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