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HUFA76443S3ST

P1-P3P4-P6P7-P9P10-P10
©2001 Fairchild Semiconductor Corporation HUF76443P3, HUF76443S3S Rev. B
PSPICE Electrical Model
.SUBCKT HUF76443 2 1 3 ; rev 26 August 1999
CA 12 8 5.50e-9
CB 15 14 5.50e-9
CIN 6 8 3.90e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.05
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.00e-9
LGATE 1 9 5 4.92e-9
LSOURCE 3 7 2.39e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.80e-3
RGATE 9 20 0.84
RLDRAIN 2 5 10
RLGATE 1 9 49.2
RLSOURCE 3 7 23.9
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.20e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*475),3))}
.MODEL DBODYMOD D (IS = 3.16e-12 RS = 2.54e-3 TRS1 = 2.21e-3 TRS2 = 0 CJO = 4.95e-9 TT = 6.81e-8 M = 0.50)
.MODEL DBREAKMOD D (RS = 1.41e- 1TRS1 = 1.09e- 4TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 3.47e- 9IS = 1e-3 0 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 1.90 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.84)
.MODEL MSTROMOD NMOS (VTO = 2.31 KP = 195 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.68 KP = 0.12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.4 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.14e- 3TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 9.91e-3 TC2 = 2.75e-5)
.MODEL RSLCMOD RES (TC1 = 1.01e-3 TC2 = 3.23e-5)
.MODEL RSOURCEMOD RES (TC1 = 1.00e-3 TC2 =0)
.MODEL RVTHRESMOD RES (TC1 = -2.59e-3 TC2 = -8.95e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.56e- 3TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.00 VOFF= -3.00)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.00 VOFF= -5.00)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.50 VOFF= 0.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.0 VOFF= -0.50)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
HUF76443P3, HUF76443S3S
©2001 Fairchild Semiconductor Corporation HUF76443P3, HUF76443S3S Rev. B
SABER Electrical Model
REV 26 August 1999
template huf76443 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 3.16e-12, cjo = 4.95e-9, tt = 6.81e-8, m = 0.50)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 3.47e-9, is = 1e-30, m = 0.85 )
m..model mmedmod = (type=_n, vto = 1.90, kp = 5, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.31, kp = 195, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.68, kp = 0.12, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.0, voff = -3.0)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -3.0, voff = -5.0)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.50, voff = 0.0)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.0, voff = -0.50)
c.ca n12 n8 = 5.50e-9
c.cb n15 n14 = 5.50e-9
c.cin n6 n8 = 3.90e-9
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.00e-9
l.lgate n1 n9 = 4.92e-9
l.lsource n3 n7 = 2.39e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1.14e-3, tc2 = 0
res.rdbody n71 n5 = 2.54e-3, tc1 = 2.21e-3, tc2 = 0
res.rdbreak n72 n5 = 1.41e-1, tc1 = 1.09e-4, tc2 = 0
res.rdrain n50 n16 = 2.8e-3, tc1 = 9.91e-3, tc2 = 2.75e-5
res.rgate n9 n20 = 0.84
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 49.2
res.rlsource n3 n7 = 23.9
res.rslc1 n5 n51 = 1.0e-6, tc1 = 1.01e-3, tc2 = 3.23e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.2e-3, tc1 = 1.0e-3, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -1.56e-3, tc2 = 0
res.rvthres n22 n8 = 1, tc1 = -2.59e-3, tc2 = -8.95e-6
spe.ebreak n11 n7 n17 n18 = 66.05
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/475))** 3))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
RDBODY
RDBREAK
72
71
HUF76443P3, HUF76443S3S
©2001 Fairchild Semiconductor Corporation HUF76443P3, HUF76443S3S Rev. B
SPICE Thermal Model
REV 25 August 1999
HUF76443T
CTHERM1 th 6 5.50e-3
CTHERM2 6 5 2.50e-2
CTHERM3 5 4 1.75e-2
CTHERM4 4 3 1.00e-2
CTHERM5 3 2 4.85e-2
CTHERM6 2 tl 12.55
RTHERM1 th 6 3.89e-3
RTHERM2 6 5 9.69e-3
RTHERM3 5 4 2.73e-2
RTHERM4 4 3 1.53e-1
RTHERM5 3 2 2.31e-1
RTHERM6 2 tl 3.07e-2
SABER Thermal Model
SABER thermal model HUF76443T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 5.50e-3
ctherm.ctherm2 6 5 = 2.50e-2
ctherm.ctherm3 5 4 = 1.75e-2
ctherm.ctherm4 4 3 = 1.00e-2
ctherm.ctherm5 3 2 = 4.85e-2
ctherm.ctherm6 2 tl = 12.55
rtherm.rtherm1 th 6 = 3.89e-3
rtherm.rtherm2 6 5 = 9.69e-3
rtherm.rtherm3 5 4 = 2.73e-2
rtherm.rtherm4 4 3 = 1.53e-1
rtherm.rtherm5 3 2 = 2.31e-1
rtherm.rtherm6 2 tl = 3.07e-2
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF76443P3, HUF76443S3S
P1-P3P4-P6P7-P9P10-P10

HUFA76443S3ST

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Buy HUFA76443S3ST
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 75A D2PAK
Lifecycle:
New from this manufacturer.
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