30WQ10FNTR

SCHOTTKY RECTIFIER 3.5 Amp
30WQ10FN
Major Ratings and Characteristics
I
F(AV)
Rectangular 3.5 A
waveform
V
RRM
100 V
I
FSM
@ tp = 5 μs sine 440 A
V
F
@
3 Apk, T
J
= 125°C 0.63 V
T
J
- 40 to 150 °C
Characteristics Values Units
Description/ Features
The 30WQ10FN surface mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Popular D-PAK outline
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
I
F(AV)
= 3.5Amp
V
R
= 100V
Case Styles
D-PAK (TO-252AA)
Anod
e
1
3
Base
Cathode
A
node
4, 2
Bulletin PD-20523 rev. G 05/06
Document Number: 93317
www.vishay.com
1
30WQ10FN
Bulletin PD-20523 rev. G 05/06
Part number 30WQ10FN
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
100
Voltage Ratings
V
FM
Max. Forward Voltage Drop 0.81 V @ 3A
* See Fig. 1 (1) 0.96 V @ 6A
0.63 V @ 3A
0.74 V @ 6A
I
RM
Max. Reverse Leakage Current 1 mA T
J
= 25 °C
* See Fig. 2 (1) 4.9 mA T
J
= 125 °C
V
F(TO)
Threshold Voltage 0.48 V T
J
= T
J
max.
r
t
Forward Slope Resistance 30.89 mΩ
C
T
Typical Junction Capacitance 92 pF V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/μs (Rated V
R
)
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters 30WQ... Units Conditions
(1) Pulse Width < 300μs, Duty Cycle < 2%
T
J
Max. Junction Temperature Range(*) -40 to 150 °C
T
stg
Max. Storage Temperature Range -40 to 150 °C
R
thJC
Max. Thermal Resistance Junction 4.7 °C/W DC operation * See Fig. 4
to Case
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D - PAK Similar to TO-252AA
Marking Device 30WQ10FN
Thermal-Mechanical Specifications
Parameters 30WQ... Units Conditions
I
F(AV)
Max. Average Forward Current 3.5 A 50% duty cycle @ T
C
= 135°C, rectangular wave form
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive 440 5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7 70 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy 5.0 mJ T
J
= 25 °C, I
AS
= 1 Amp, L = 10 mH
I
AR
Repetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM
applied
A
Parameters 30WQ... Units Conditions
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
Document Number: 93317
www.vishay.com
2
30WQ10FN
Bulletin PD-20523 rev. G 05/06
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
0 20406080100
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Current - I (mA)
T = 150°C
J
Reverse Voltage - V (V)
10
100
0 20406080100
R
T
Junction Capacitance - C (pF)
Reverse Voltage - V (V)
T = 25°C
J
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
thJC
t , Rectangular Pulse Duration (Seconds)
Single Pulse
( Th e rm a l Re si st a n c e )
1
Thermal Impedance Z C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Not es:
1. Duty factor D = t / t
2. Pea k T = P x Z + T
1
2
C
thJC
DM
J
2
t
1
t
P
DM
1
10
100
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2
Instant aneous Forward Current - I (A)
F
FM
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Document Number: 93317
www.vishay.com
3

30WQ10FNTR

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-30WQ10FNTR-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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