MBR4015CTLG

© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 7
1 Publication Order Number:
MBR4015CTL/D
MBR4015CTLG
Switch-mode
Power Rectifier
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
150°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
This Device is Pb−Free and is RoHS Compliant*
Applications
Power Supply – Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
TO−220
STYLE 6
CASE 221A
3
4
1
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES, 15 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
MBR4015CTLG TO−220
(Pb−Free)
50 Units/Rail
www.onsemi.com
AY WW
B4015LG
A K A
A = Assembly Location
Y = Year
WW = Work Week
B4015L= Device Code
G = Pb−Free Package
AKA = Polarity Designator
MBR4015CTLG
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
15 V
Average Rectified Forward Current
(T
C
= 140°C per Diode)
(T
C
= 140°C per Device)
I
F(AV)
20
40
A
Peak Repetitive Forward Current, per Diode (Square Wave, 20 kHz, T
C
= 135°C) I
FRM
40 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
1.0 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 1,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS (Per Diode)
Characteristic Conditions Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Case Min. Pad
R
q
JC
1.3
°C/W
Maximum Thermal Resistance, Junction−to−Ambient Min. Pad
R
q
JA
70
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typical Max Unit
Instantaneous Forward Voltage (Note 2)
(i
F
= 20 A, T
j
= 125°C)
(i
F
= 40 A, Tj = 125°C)
(i
F
= 20 A, Tj = 25°C)
(i
F
= 40 A, Tj = 25°C)
v
F
0.31
0.45
0.41
0.51
0.34
0.50
0.43
0.54
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
i
R
300
0.8
600
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.50.40.30.20.10
0.1
1.0
10
100
0.1
1.0
10
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
0.6
125°C
150°C
25°C
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100°C
75°C
0.50.40.30.20.10 0.6
125°C
150°C
25°C
100°C
75°C
MBR4015CTLG
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3
Figure 3. Typical Reverse Current Figure 4. Current Derating, Case, Per Leg
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
1614108.06.04.02.00
0.0001
0.001
0.01
0.1
1.0
155150145140135130125
0
4.0
16
24
28
34
Figure 5. Current Derating, Ambient, Per Leg Figure 6. Forward Power Dissipation
T
A
, AMBIENT TEMPERATURE (°C) I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1751501251007550250
0
2.0
4.0
6.0
8.0
10
18
30
24161412104.02.00
0
2.0
4.0
8.0
10
12
14
I
R
, REVERSE CURRENT (A)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
P
F(AV)
, AVERAGE POWER DISSIPATION (W)
8.0
12
20
12
14
16
6.0 8.0 222018 26
6.0
T
J
= 150°C
dc
Square Wave
dc
Square Wave
dc
Square Wave
R
q
JA
= 16°C/W
R
q
JA
= 70°C/W
No Heatsink
Square Wave
dc
Figure 7. Typical Capacitance
V
R
, REVERSE VOLTAGE (V)
161412104.02.00
0
1000
2000
3000
4000
5000
6000
7000
C, CAPACITANCE (pF)
6.0 8.0
12
125°C
100°C
75°C
25°C
32
20
26
22
24
28

MBR4015CTLG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 40A 15V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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