KSD1589OTU

©2003 Fairchild Semiconductor Corporation Rev. B, September 2003

KSD1589

NPN Silicon Darlington Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

* PW≤10ms, Duty Cycle≤50%

Electrical Characteristics

T

C

=25°C unless otherwise noted

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 150 V

V

CEO

Collector-Emitter Voltage 100 V

V

EBO

Emitter-Base Voltage 7 V

I

C

Collector Current (DC) 5 A

I

CP

*Collector Current (Pulse) 8 A

I

B

Base Current 0.5 A

P

C

Collector Dissipation (T

a

=25°C) 1.5 W

Collector Dissipation (T

C

=25°C) 20 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

I

CBO

Collector Cut-off Current V

CB

= 100V, I

E

= 0 1 µA

h

FE1

h

FE2

*DC Current Gain V

CE

= 2V, I

C

= 3A

V

CE

= 2V, I

C

= 5A

2K

500

6K 15K

V

CE

(sat) *Collector-Emitter Saturation Voltage I

C

= 3A, I

B

= 3mA 0.9 1.5 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 3A, I

B

= 3mA 1.6 2 V

t

ON

Turn On Time V

CC

⋅

=

⋅

50V, I

C

= 3A

I

B1

= - I

B2

= 3mA

R

L

= 16.7Ω

1 µs

t

stg

Storage Time 3.5 µs

t

f

Fall Time 1.2 µs

Classification R O Y

h

FE1

2000 ~ 5000 3000 ~ 7000 5000 ~ 15000

KSD1589

Low Frequency Power Amplifier

Low Speed Switching Industrial Use

• Complement to KSB1098

TO-220F

1.Base 2.Collector 3.Emitter

1

Equivalent Circuit

B

E

C

R1

R2

R18kΩ≅

R20.12kΩ≅

©2003 Fairchild Semiconductor Corporation

KSD1589

Rev. B, September 2003

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Safe Operating Area

Figure 5. Power Derating

012345

0

1

2

3

4

5

I

B

= 0.35mA

I

B

= 0.7mA

I

B

= 0.4mA

I

B

= 1mA

I

B

= 0.5mA

I

B

= 0.3mA

I

B

= 0

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.001 0.1 1 10

10

100

1k

10k

V

CE

= 2V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.1 1 10

0.1

1

10

100

I

C

= 1000 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

1 10 100 500

0.01

0.1

1

10

100

3ms

100

µ

s

300

µ

s

100ms

1ms

10ms

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

5

10

15

20

25

30

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

(7.00)

(0.70)

MAX1.47

(30°)

#1

3.30

±0.10

15.80

±0.20

15.87

±0.20

6.68

±0.20

9.75

±0.30

4.70

±0.20

10.16

±0.20

(1.00x45°)

2.54

±0.20

0.80

±0.10

9.40

±0.20

2.76

±0.20

0.35

±0.10

ø3.18

±0.10

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

0.50

+0.10

–0.05

TO-220F

Package Dimensions

K

SD1589

Dimensions in Millimeters

©2003 Fairchild Semiconductor Corporation Rev. B, September 2003

KSD1589OTU

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

TRANS NPN DARL 100V 5A TO-220F

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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