TC7SZ17FE,LJ(CT

TC7SZ17FE
2014-03-01 1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SZ17FE
Schmitt Buffer
Features
High output current : ±24mA (min) at V
CC
= 3 V
Super high speed operation : t
pd
= 3.7 ns (typ.)
at V
CC
= 5V, 50pF
Operation voltage range : V
CC (opr.)
= 1.65 to 5.5 V
5.5-V tolerant input
5.5-V power down protection output
Matches the performance of TC74LCX series when operated at
3.3-V V
CC
Absolute Maximum Ratings
(Ta
=
25°C) Marking
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: V
CC
= 0V
Note 2: High or Low state. Do not exceed I
OUT
of absolute maximum ratings.
Note 3: V
OUT
< GND
(ESV)
Weight : 0.003 g (typ.)
Characteristics Symbol Rating Unit
Supply voltage range V
CC
0.5 to 6 V
DC input voltage V
IN
0.5 to 6 V
0.5 to 6 (Note 1)
DC output voltage V
OUT
0.5 to V
CC
+0.5 (Note 2)
V
Input diode current I
IK
20 mA
Output diode current I
OK
20 (Note 3) mA
DC output current I
OUT
±50 mA
DC V
CC
/ground current I
CC
±50 mA
Power dissipation P
D
150 mW
Storage temperature T
stg
65 to 150 °C
Product name
J L
Pin Assignment
(top view)
GND
V
CC
OUT Y
NC
IN A
2
3
5
4
1
Start of commercial production
2008-11
TC7SZ17FE
2014-03-01 2
IEC Logic Symbol Truth Table
Operating Ranges
Characteristics Symbol Rating Unit
1.65 to 5.5
Supply voltage V
CC
1.5 to 5.5 (Note 4)
V
Input voltage V
IN
0 to 5.5 V
0 to 5.5 (Note 5)
Output voltage V
OUT
0 to V
CC
(Note 6)
V
Operating temperature T
opr
40 to 85 °C
Note 4: Data retention only
Note 5: V
CC
= 0V
Note 6: High or Low State
Electrical Characteristics
DC Characteristics
Ta = 25°C Ta = 40 to 85°C
Characteristics
Symbol Test Condition
V
CC
(V)
Min Typ. Max Min Max
Unit
1.65 0.6 1.0 1.4 0.6 1.4
1.8 0.7 1.1 1.5 0.7 1.5
2.3 1.0 1.4 1.8 1.0 1.8
3.0 1.3 1.75 2.2 1.3 2.2
4.5 1.9 2.45 3.1 1.9 3.1
High-level V
P
5.5 2.2 2.9 3.6 2.2 3.6
1.65 0.2 0.5 0.8 0.2 0.8
1.8 0.25 0.55 0.9 0.25 0.9
2.3 0.40 0.75 1.15 0.40 1.15
3.0 0.6 1.0 1.5 0.6 1.5
4.5 1.0 1.43 2.0 1.0 2.0
Threshold
voltage
Low-level V
N
5.5 1.2 1.70 2.4 1.2 2.4
V
1.65 0.1 0.48 0.9 0.1 1.0
1.8 0.15 0.54 1.0 0.15 1.0
2.3 0.25 0.65 1.1 0.25 1.1
3.0 0.4 0.77 1.2 0.4 1.2
4.5 0.6 1.01 1.5 0.6 1.5
Hysteresis voltage V
H
5.5 0.7 1.18 1.7 0.7 1.7
V
A Y
L L
H H
IN A OUT Y
TC7SZ17FE
2014-03-01 3
Ta = 25°C Ta = 40 to 85°C
Characteristics
Symbol Test Condition
V
CC
(V)
Min Typ. Max Min Max
Unit
1.65 1.55 1.65 1.55
1.8 1.7 1.8 1.7
2.3 2.2 2.3 2.2
3.0 2.9 3.0 2.9
I
OH
= 100 μA
4.5 4.4 4.5 4.4
I
OH
= 4 mA 1.65 1.29 1.52 1.29
I
OH
= 8 mA 2.3 1.9 2.15 1.9
I
OH
= 16 mA 3.0 2.4 2.8 2.4
I
OH
= 24 mA 3.0 2.3 2.68 2.3
High-level V
OH
V
IN
= V
P
I
OH
= 32 mA 4.5 3.8 4.2 3.8
V
1.65 0 0.1 0.1
1.8 0 0.1 0.1
2.3 0 0.1 0.1
3.0 0 0.1 0.1
I
OL
= 100 μA
4.5 0 0.1 0.1
I
OL
= 4 mA 1.65 0.08 0.24 0.24
I
OL
= 8 mA 2.3 0.1 0.3 0.3
I
OL
= 16 mA 3.0 0.15 0.4 0.4
I
OL
= 24 mA 3.0 0.22 0.55 0.55
Output
voltage
Low-level output
voltage
V
OL
V
IN
= V
N
I
OL
= 32 mA 4.5 0.22 0.55 0.55
V
Input leakage current I
IN
V
IN
= 5.5 V or GND 0 to 5.5 ±1 ±10 μA
Power OFF leakage current I
OFF
V
IN
ορ V
OUT
= 5.5 V 0.0 1 10 μA
Quiescent supply current I
CC
V
IN
= V
CC
or GND 1.65 to 5.5 2 20 μA
AC Characteristics (unless otherwise specified, Input: t
r
=
t
f
=
3 ns)
Ta = 25°C Ta = 40 to 85°C
Characteristics Symbol
Test Condition
V
CC
(V) Min Typ. Max Min Max
Unit
1.8±0.15 2.0 9.1 15.0 2.0 15.6
2.5 ± 0.2 1.0 5.0 9.0 1.0 9.5
3.3 ± 0.3 1.0 3.7 6.3 1.0 6.5
C
L
= 15 pF, R
L
= 1 MΩ
5.0 ± 0.5 0.5 3.1 5.2 0.5 5.5
3.3 ± 0.3 1.5 4.4 7.2 1.5 7.5
Propagation delay time
t
pLH
t
pHL
C
L
= 50 pF, R
L
= 500 Ω
5.0 ± 0.5 0.5 3.7 5.9 0.5 6.2
ns
Input capacitance C
IN
0 to 5.5 4 pF
3.3 24
Power dissipation
capacitance
C
PD
(Note 7)
5.5 30
pF
Note 7: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation.
I
CC (opr.)
= C
PD
V
CC
f
IN
+ I
CC

TC7SZ17FE,LJ(CT

Mfr. #:
Manufacturer:
Description:
Buffers & Line Drivers ESV L-MOS(SHS)
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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