SI2304
Micro Commercial Components
TM
Revision: B 2013/01/01
2 of 5
Electrical Characteristics T
A
= 25 C unless otherwise noted
Parameter Symbol Test Condition Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID =250µA 30 V
Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =1V 1 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics
Gate Threshold Voltage VGS(th) VGS = VDS, ID =250µA 1 3 V
VGS =10V, ID =2.5A 65 mȍ
Static Drain-Source On-Resistance
R
DS(on)
VGS =4.5V, ID =2A 90 mȍ
Forward Transconductance gFS VDS =4.5V, ID =2.5A 4.6 S
Dynamic Characteristics
Input Capacitance Ciss 240 pF
Output Capacitance Coss 110 pF
Reverse Transfer Capacitance Crss
VDS =15V, VGS = 0V,
f = 1.0 MHz
17 pF
Switching Characteristics
Turn-On Delay Time td(on) 8 20 ns
Turn-On Rise Time tr 12 30 ns
Turn-Off Delay Time td(off) 17 35 ns
Turn-Off Fall Time tf
VDD = 15V, ID =1A,
V
GEN =10V, RG=6ȍ,
R
L=15ȍ
8 20 ns
Total Gate Charge Qg 4.5 10 nC
Gate-Source Charge Qgs 0.8 nC
Gate-Drain Charge Qgd
VDS =15V, ID =2.5A,
V
GS =10V
1.0 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =1.25A 1.2 V
