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CLA50E1200HB

P1-P3P4-P5
CLA50E1200HB
Single Thyristor
High Efficiency Thyristor
2 1
3
Part number
CLA50E1200HB
Backside: anode
TAV
T
V V1,27
RRM
50
1200
=
V
=
V
I
=
A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions.
20150827hData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CLA50E1200HB
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
I
A
V
T
1,32
R
0,25 K/W
min.
50
V
V
50T = 25°C
VJ
T = °C
VJ
mA4V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
125
P
tot
500 WT = 25°C
C
50
1200
forward voltage drop
total power dissipation
Unit
1,60
T = 25°C
VJ
125
V
T0
V0,88T = °C
VJ
150
r
T
7,7
mΩ
V1,27T = °C
VJ
I = A
T
V
50
1,65
I = A100
I = A100
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
V1200T = 25°C
VJ
I
A79
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0,5
average gate power dissipation
C
J
25
junction capacitance
V = V400 T = 25°Cf = 1 MHz
R
VJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t
T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
650
700
1,54
1,48
A
A
A
A
555
595
2,12
2,04
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt)
T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R =
∞; method 1 (linear voltage rise)
VJ
D
VJ
150 A
T
P
G
= 0,3
di /dt A/µs;
G
=
0,3
DRM
cr
V =
⅔ V
DRM
GK
1000
1,5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
D
VJ
50 mA
T = °C-40
VJ
1,6 V
80 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0,2 V
I
GD
gate non-trigger current
3 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
125 mA
I
L
25t
µs
p
=
10
I A;
G
= 0,3 di /dt A/µs
G
= 0,3
holding current
T = °C
VJ
100 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0,3 di /dt A/µs
G
= 0,3
V = ½ V
D DRM
turn-off time
T = °C
VJ
200 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 50 V =
⅔ V
DRM
t
µs
p
= 200
non-repet., I = 50 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0,25
IXYS reserves the right to change limits, conditions and dimensions.
20150827hData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CLA50E1200HB
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
C
L
A
50
E
1200
HB
Part description
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
Single Thyristor
TO-247AD (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1,2
mounting torque
0,8
T
VJ
°C150
virtual junction temperature
-40
Weight
g6
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N120
mounting force with clip
20
I
RMS
RMS current
70 A
per terminal
125-40
TO-247
Similar Part Package Voltage class
CLA50E1200TC TO-268AA (D3Pak) (2) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
CLA50E1200HB 503748Tube 30CLA50E1200HBStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0,88
mΩ
V
0 max
R
0 max
slope resistance *
5,2
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20150827hData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
P1-P3P4-P5

CLA50E1200HB

Mfr. #:
Buy CLA50E1200HB
Manufacturer:
Littelfuse
Description:
SCRs 50 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
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