Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Collector current I
C
200 mA
Two current gain selections
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
2PD601BRL; 2PD601BSL
50 V, 200 mA NPN general-purpose transistors
Rev. 1 — 28 June 2010 Product data sheet
Table 1. Product overview
Type number Package PNP complement
NXP JEDEC
2PD601BRL SOT23 TO-236AB 2PB709BRL
2PD601BSL 2PB709BSL
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 50 V
I
C
collector current - - 200 mA
h
FE
DC current gain V
CE
=10V;
I
C
=2mA
210 - 460
h
FE
group R 210 - 340
h
FE
group S 290 - 460
2PD601BRL_2PD601BSL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 28 June 2010 2 of 13
NXP Semiconductors
2PD601BRL; 2PD601BSL
50 V, 200 mA NPN general-purpose transistors
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
12
3
sym02
1
3
2
1
Table 4. Ordering information
Type number Package
Name Description Version
2PD601BRL - plastic surface-mounted package; 3 leads SOT23
2PD601BSL
Table 5. Marking codes
Type number Marking code
[1]
2PD601BRL ML*
2PD601BSL MM*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 200 mA
I
CM
peak collector current single pulse;
t
p
1ms
-300mA
I
BM
peak base current single pulse;
t
p
1ms
-200mA

2PD601BRL,215

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN 50 V 200 mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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