VND830SP-E Application schematic
D
oc ID 10879 Rev 3
19/28
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
GND
will produce a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2 Solution 2: a diode (D
GND
) in the ground line
A resistor (R
GND
= 1 kΩ) should be inserted in parallel to D
GND
if the device will be driving
an inductive load. This small signal diode can be safely shared amongst several different
HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in
the input threshold and the status output values if the microprocessor ground is not common
with the device ground. This shift will not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the Absolute Maximum
Rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.
3.2 Load dump protection
D
ld
is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
V
CC
maximum DC rating. The same applies if the device is subject to transients on the V
CC
line that are greater than those shown in the ISO T/R 7637/1 table.
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the V
CC
line,
the control pins will be pulled negative. ST suggests to insert a resistor (R
prot
) in line to
prevent the microcontroller I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
-V
CCpeak
/ I
latchup
R
prot
(V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
= -100 V
I
latchup
20 mA
V
OHμC
4.5 V
5kΩ R
prot
65 kΩ.
Recommended values are:
R
prot
= 10 kΩ
VND830SP-E Application schematic
D
oc ID 10879 Rev 3
20/28
3.4 Open-load detection in off-state
Off-state open load detection requires an external pull-up resistor (R
PU
) connected between
OUTPUT pin and a positive supply voltage (V
PU
) like the +5V line used to supply the
microprocessor.
The external resistor has to be selected according to the following requirements:
1. no false open load indication when load is connected: in this case we have to avoid
V
OUT
to be higher than V
Olmin
; this results in the following condition
V
OUT
= (V
PU
/ (R
L
+ R
PU
))R
L
< V
Olmin.
2. no misdetection when load is disconnected: in this case the V
OUT
has to be higher than
V
OLmax
; this results in the following condition R
PU
< (V
PU
- V
OLmax
) / I
L(off2)
.
Because I
S(OFF)
may significantly increase if V
out
is pulled high (up to several mA), the pull-
up resistor R
PU
should be connected to a supply that is switched OFF when the module is in
standby.
Figure 26. Open-load detection in off-state
VND830SP-E Package and PCB thermal data
D
oc ID 10879 Rev 3
21/28
4 Package and PCB thermal data
4.1 PowerSO-10 thermal data
Figure 27. PowerSO-10 PC board
Note: Layout condition of R
th
and Z
th
measurements (PCB FR4 area = 58 mm x 58 mm, PCB
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to
8cm
2
).
Figure 28. R
thj-amb
vs PCB copper area in open box free air condition

VND830SP-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Double Ch High Side
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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