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MMBT2222A-7-F

P1-P3P4-P6P7-P7
MMBT2222A
Document number: DS30041 Rev. 16 - 2
4 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
75
V
I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
40
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6.0
V
I
E
= 100µA, I
C
= 0
Collector Cut-Off Current
I
CBO
10
nA
µA
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= +150°C
Collector Cut-Off Current
I
CEX
10 nA
V
CE
= 60V, V
EB(OFF)
= 3.0V
Collector Cut-Off Current
I
CEV
10
nA
V
CE
= 60V, V
BE
= ±0.25V
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
= 5.0V, I
C
= 0
Base Cut-Off Current
I
BL
20 nA
V
CE
= 60V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 10)
DC Current Gain
h
FE
35
50
75
100
40
50
35
300
I
C
= 100µA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55°C
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.6
1.2
2.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8 pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
— 25 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product
f
T
300
MHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
Noise Figure
N
F
4.0 dB
V
CE
= 10V, I
C
= 100µA,
R
S
= 1.0kΩ,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
D
10 ns
V
CC
= 30V, I
C
= 150mA,
V
BE(OFF)
= - 0.5V, I
B1
= 15mA
Rise Time
t
R
25 ns
V
CC
= 3.0V, I
C
= 150mA, I
B1
= 15mA,
V
BE(OFF)
= 0.5V
Storage Time
t
S
225 ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Fall Time
t
F
60
ns
V
CC
= 30V, I
C
= 150mA, I
B1
= I
B2
= 15mA
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT2222A
Document number: DS30041 Rev. 16 - 2
5 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
1
10
100
1,000
1 10 100
I , COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product
vs. Collector Current
C
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V = 5V
CE
0.001 0.01
1
10
0.1
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
B
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
18
20
f = 1MHz
C
obo
C
ibo
V , REVERSE VOLTAGE (V)
Figure 4 Typical Capacitance Characteristics
R
CAPACITANCE (pF)
1
0.1
10
100
V
,
B
A
S
E
-
E
M
I
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
I , COLLECTOR CURRENT (mA)
Figure 3 Base-Emitter Turn-On Voltage
vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1
10
100
1,000
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
C
E
(
S
A
T
)
I , COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1
10
1,000
100
0.1
1
10
1,000
100
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
I , COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = 25°C
A
T = 125°C
A
V = 1.0V
CE
h
FE
, DC CURRENT GAIN
MMBT2222A
Document number: DS30041 Rev. 16 - 2
6 of 7
www.diodes.com
April 2016
© Diodes Incorporated
MMBT2222A
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1
K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
C
B
D
G
F
a
X
Y
Y1
C
X1
P1-P3P4-P6P7-P7

MMBT2222A-7-F

Mfr. #:
Buy MMBT2222A-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40V 300mW
Lifecycle:
New from this manufacturer.
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