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Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V, 10 16 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
ies
1500 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 130 pF
C
res
40 pF
Q
g
80 100 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
15 30 nC
Q
gc
30 40 nC
t
d(on)
15 ns
t
ri
25 ns
t
d(off)
400 800 ns
t
fi
400 800 ns
E
off
6mJ
t
d(on)
15 ns
t
ri
25 ns
E
on
1mJ
t
d(off)
800 ns
t
fi
800 ns
E
off
12 mJ
R
thJC
0.83 K/W
R
thCK
0.25 K/W
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
F
= I
C90
, V
GE
= 0 V, T
J
= 150°C 1.6 V
Pulse test, t £ 300 ms, duty cycle d £ 2 % T
J
= 25°C 2.5 V
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 100 A/ms6A
t
rr
V
R
= 100 V T
J
=100°C 100 ns
I
F
= 1 A; -di/dt = 100 A/ms; V
R
= 30 V T
J
= 25°C25 ns
R
thJC
1K/W
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 100 mH,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10 W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V, L = 100 mH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10 W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
IXGH 31N60D1
IXGT 31N60D1
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D
3
PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A
2
.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
