IRF9310PBF Datasheet IRF9310TRPBF, IRF9310PBF | P1-P3

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IRF9310PbF

HEXFET

®

Power MOSFET

Notes  through  are on page 2

Features and Benefits

Applications

• Charge and Discharge Switch for Notebook PC Battery Application

Features

Resulting Benefits

SO-8

Note

Form Quantit

y

IRF9310PbF SO8 Tube/Bulk 95

IRF9310TRPbF SO8 Ta

p

e and Reel 4000

Orderable part number Package Type Standard Pack

Absolute Maximum Ratin

g

s

Parameter Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

@ T

A

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C

Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C Power Dissipation

P

D

@T

A

= 70°C

Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and

T

STG

Storage Temperature Range

-55 to + 150

2.5

0.02

1.6

Max.

-20

-16

-160

± 20

-30

V

A

W

°C

V

DS

-30 V

R

DS(on) max

(@V

GS

= 10V)

4.6

m

Ω

I

D

(@T

A

= 25°C)

-20 A

Low R

DSon

(≤ 4.6mΩ)

Lower Conduction Losses

Industry-Standard SO8 Package Multi-Vendor Compatibility

RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier

results in

⇒

03/19/2010

PD - 97437A

IRF9310PbF

2 www.irf.com

S

D

G

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting T

J

= 25°C, L = 4.9mH, R

G

= 25Ω, I

AS

= -16A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

 R

θ

is measured at T

J

of approximately 90°C.

 For DESIGN AID ONLY, not subject to production testing.

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage -30 ––– ––– V

∆Β

V

DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 0.020 ––– V/°C

R

DS(on)

––– 3.9 4.6

––– 5.8 6.8

V

GS(th)

Gate Threshold Voltage -1.3 -1.8 -2.4 V

∆

V

GS(th)

Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– -1.0

––– ––– -150

I

GSS

Gate-to-Source Forward Leakage ––– ––– -100

Gate-to-Source Reverse Leakage ––– ––– 100

gfs Forward Transconductance 39 ––– ––– S

Q

g

Total Gate Charge ––– 58 ––– nC

V

DS

= -15V, V

GS

= -4.5V, I

D

= - 16A

Q

g

Total Gate Charge ––– 110 165

Q

gs

Gate-to-Source Charge ––– 17 –––

Q

gd

Gate-to-Drain Charge ––– 28 –––

R

G

Gate Resistance ––– 2.8 –––

Ω

t

d(on)

Turn-On Delay Time ––– 25 –––

t

r

Rise Time ––– 47 –––

t

d(off)

Turn-Off Delay Time ––– 65 –––

t

f

Fall Time ––– 70 –––

C

iss

Input Capacitance ––– 5250 –––

C

oss

Output Capacitance ––– 1300 –––

C

rss

Reverse Transfer Capacitance ––– 880 –––

Avalanche Characteristics

Parameter Units

E

AS

Single Pulse Avalanche Energy mJ

I

AR

Avalanche Current A

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– -1.2 V

t

rr

Reverse Recovery Time ––– 71 107 ns

Q

rr

Reverse Recovery Charge ––– 12 18 nC

Thermal Resistance

Parameter Units

R

θJL

Junction-to-Drain Lead

R

θJA

Junction-to-Ambient

Typ.

–––

°C/W

Max.

20

50

Static Drain-to-Source On-Resistance

A

––– –––

-2.5

-160

nA

nC

ns

pF

–––

Typ.

–––

R

G

= 1.8Ω

V

DS

= -10V, I

D

= -16A

V

DS

= -24V, V

GS

= 0V, T

J

= 125°C

V

DD

= -15V, V

GS

= -4.5V

I

D

= -1.0A

V

DS

= -15V

V

GS

= -20V

V

GS

= 20V

V

GS

= -10V

m

Ω

µA

T

J

= 25°C, I

F

= -2.5A, V

DD

= -24V

di/dt = 100A/µs

T

J

= 25°C, I

S

= -2.5A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

MOSFET symbol

I

D

= -16A

V

DS

= -24V, V

GS

= 0V

Conditions

V

GS

= 0V, I

D

= -250µA

Reference to 25°C, I

D

= -1mA

V

GS

= -10V, I

D

= -20A

V

DS

= V

GS

, I

D

= -100µA

V

GS

= -4.5V, I

D

= -16A

Conditions

See Figs. 20a &20b

Max.

630

-16

ƒ = 1.0MHz

V

GS

= 0V

V

DS

= -15V

IRF9310PbF

www.irf.com 3

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1 1 10 100

-V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP -10V

-4.5V

-3.5V

-3.1V

-2.9V

-2.7V

-2.5V

BOTTOM -2.3V

≤

60µs PULSE WIDTH

Tj = 25°C

-2.3V

0.1 1 10 100

-V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

-2.3V

≤

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP -10V

-4.5V

-3.5V

-3.1V

-2.9V

-2.7V

-2.5V

BOTTOM -2.3V

1 2 3 4 5

-V

GS

, Gate-to-Source Voltage (V)

1.0

10

100

1000

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 150°C

V

DS

= -10V

≤

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= -20A

V

GS

= -10V

1 10 100

-V

DS

, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

0 25 50 75 100 125 150

Q

G

Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

-

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= -24V

V

DS

= -15V

I

D

= -16A

IRF9310PBF

IRF9310PBF

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