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ACST410-8FP

P1-P3P4-P6P7-P9P10-P12P13-P14
This is information on a product in full production.
October 2014 DocID8766 Rev 7 1/14
ACST4
Overvoltage protected AC switch
Datasheet - production data
Features
• Triac with overvoltage protection
• Low I
GT
(<10 mA) or high immunity
(I
GT
<35 mA) version
• High noise immunity: static dV/dt > 1000 V/µs
• TO-220FPAB insulated package complies with
UL 1557 standard (file ref: E81734)
Benefits
• Enables equipment to meet IEC 61000-4-5
• High off-state reliability with planar technology
• Needs no external overvoltage protection
• Reduces the power passive component count
• High immunity against fast transients
described in IEC 61000-4-4 standards
Applications
• AC mains static switching in appliance and
industrial control systems
• Drive of medium power AC loads such as:
– Universal motor of washing machine drum
– Compressor for fridge or air conditioner
Description
The ACST4 series belongs to the ACS™ / ACST
power switch family. This high performance
device is suited to home appliances or industrial
systems and drives loads up to 4 A.
This ACST4 switch embeds a Triac structure with
a high voltage clamping device to absorb the
inductive turn-off energy and withstand line
transients such as those described in the
IEC 61000-4-5 standards. The ACST410 needs a
low gate current to be activated (I
GT
< 10 mA) and
still shows a high electrical noise immunity
complying with IEC standards such as
IEC 61000-4-4 (fast transient burst test).
Provides UL 1557 certified insulation rated at
2000 V rms.
Figure 1. Functional diagram
TM: ACS is a trademark of STMicroelectronics
DPAK
TO-220FPAB
OUT
COM
COM
OUT
G
G
Table 1. Device summary
Symbol Value Unit
I
T(RMS)
4A
V
DRM
/V
RRM
800 V
I
GT
(ACST410) 10 mA
I
GT
(ACST435) 35 mA
G
COM
OUT
www.st.com
Characteristics ACST4
2/14 DocID8766 Rev 7
1 Characteristics
Table 2. Absolute maximum ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (full sine wave)
TO-220FPAB T
c
= 102 °C
4
A
DPAK T
c
= 112 °C
DPAK with 0.5
cm² copper
T
amb
= 60 °C 1
I
TSM
Non repetitive surge peak on-state current
(full cycle sine wave, T
J
initial = 25 °C)
F = 60 Hz t
p
= 16.7 ms 32 A
F = 50 Hz t
p
= 20 ms 30 A
I
²
tI
²
t Value for fusing t
p
= 10 ms 6 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
= 100 ns
F = 120 Hz T
j
= 125 °C 100 A/µs
V
PP
(1)
Non repetitive line peak mains voltage
(1)
T
j
= 25 °C 2 kV
P
G(AV)
Average gate power dissipation T
j
= 125 °C 0.1 W
P
GM
Peak gate power dissipation (t
p
= 20 µs) T
j
= 125 °C 10 W
I
GM
Peak gate current (t
p
= 20 µs) T
j
= 125 °C 1.6 A
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +125
°C
T
l
Maximum lead soldering temperature during 10 s (at 3 mm from plastic case) 260 °C
V
INS(RMS)
Insulation rms voltage T0-220FPAB 2000 V
1. According to test described in IEC 61000-4-5 standard and Figure 19
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant ACST410 ACST435 Unit
I
GT
(1)
V
OUT
= 12 V, R
L
= 33 Ω I - II - III MAX 10 35 mA
V
GT
V
OUT
= 12 V, R
L
= 33 Ω I - II - III MAX 1.0 1.1 V
V
GD
V
OUT
= V
DRM
, R
L
= 3.3 kΩ,T
j
= 125 °C I - II - III MIN 0.2 V
I
H
(2)
I
OUT
= 500 mA MAX 20 25 mA
I
L
I
G
= 1.2 x I
GT
I - II-III MAX 40 60 mA
dV/dt
(2)
V
OUT
= 67% V
DRM
gate open, T
j
= 125 °C MIN 500 1000 V/µs
(dI/dt)c
(2)
without snubber, T
j
= 125 °C MIN 5 A/ms
(dI/dt)c
(2)
(dV/dt)c = 15 V/µs, T
j
= 125 °C 2 A/ms
V
CL
I
CL
= 0.1 mA, t
p
= 1 ms MIN 850 V
1. Minimum I
GT
is guaranteed at 5% of I
GT
max
2. For both polarities of OUT pin referenced to COM pin
DocID8766 Rev 7 3/14
ACST4 Characteristics
14
Table 4. Static electrical characteristics
Symbol Test conditions Value Unit
V
TM
(1)
I
TM
= 5.6 A, t
p
= 500 µs T
j
= 25 °C MAX 1.7 V
V
TO
(1)
Threshold voltage T
j
= 125 °C MAX 0.9 V
R
D
(1)
Dynamic resistance T
j
= 125 °C MAX 110 m Ω
I
DRM
I
RRM
V
OUT
= V
DRM
/ V
RRM
T
j
= 25 °C
MAX
20 µA
T
j
= 125 °C 0.5 mA
1. For both polarities of OUT pin referenced to COM pin
Table 5. Thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
Junction to case for full cycle sine wave conduction
DPAK 2.6
°C/W
TO-220FPAB 4.6
R
th(j-a)
Junction to ambient
TO-220FPAB 60
S
CU
(1)
= 0.5 cm
²
DPAK 70
1. S
CU
= copper surface under tab
Figure 2. Maximum power dissipation versus
on-state rms current
Figure 3. On-state rms current versus case
temperature (full cycle)
0
1
2
3
4
5
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
180°
α = 180°
P(W)
I
T(RMS)
(A)
I
T(RMS)
(A)
0
1
2
3
4
5
0 25 50 75 100 125
α=180°
TO220FPAB
DPAK
T
C
(°C)
P1-P3P4-P6P7-P9P10-P12P13-P14

ACST410-8FP

Mfr. #:
Buy ACST410-8FP
Manufacturer:
STMicroelectronics
Description:
Triacs AC POWER SWITCH 4 AMP LOAD <10 mA
Lifecycle:
New from this manufacturer.
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