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ACST435-8FP

P1-P3P4-P6P7-P9P10-P12P13-P14
Characteristics ACST4
4/14 DocID8766 Rev 7
Figure 4. On-state rms current versus ambient
temperature (free air convection, full cycle)
Figure 5. Relative variation of thermal
impedance versus pulse duration
I
T(RMS)
(A)
0.0
0.5
1.0
1.5
2.0
0 25 50 75 100 125
α=180°
TO-220FPAB
DPAK with copper
surface = 0.5 cm
2
T
a
(°C)
K = [Z
th
/ R
th
]
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Z
th(j-a)
Z
th(j-c)
TO-220FPAB
DPAK
T
p
(s)
Figure 6. Relative variation of gate trigger
current (I
GT
) and voltage (V
GT
) versus junction
temperature
Figure 7. Relative variation of holding current
(I
H
) and latching current (I
L
) versus junction
temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
I
GT
Q3
I
GT
Q1-Q2
V Q1-Q2-Q3
GT
I
GT
,V
GT
[T
j
] / I
GT
,V
GT
[T
j
= 25 °C]
(typical values)
T
j
(°C)
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
I
H
,I
L
[T
j
] / I
H
,I
L
[T
j
= 25 °C]
T
j
(°C)
I
H
I
L
(typical values)
Figure 8. Surge peak on-state current
versus number of cycles
Figure 9. Non repetitive surge peak on-state
current and corresponding value of I
2
t versus
sinusoidal pulse width
I
TSM
(A)
0
5
10
15
20
25
30
35
1 10 100 1000
Non repetitive
T
j
initial=25 °C
One cycle
t=20ms
Repetitive
T
C
=102°C
Number of cycles
1
10
100
1000
0.01 0.10 1.00 10.00
t(ms)
p
I
TSM
(A), I²t (A²s)
dl /dt limitation: 100 A / µs
T
j
initial = 25 °C
I
TSM
I²t
DocID8766 Rev 7 5/14
ACST4 Characteristics
14
Figure 10. On-state characteristics
(maximum values)
Figure 11. Relative variation of critical rate of
decrease of main current (dI/dt)
c
versus
junction temperature
1
10
100
012345
T
j
= 125 °C
T
j
= 25 °C
I
TM
(A)
V
TM
(V)
T
j
max:
V
to
= 0.90 V
R
d
= 110 mΩ
0
1
2
3
4
5
6
7
25 50 75 100 125
8
T
j
(°C)
(dI/dt)
c
[T
j
] / (dl/dt)
c
[T
j
= 125 °C]
Figure 12. Relative variation of static dV/dt
immunity versus junction temperature
(gate open)
Figure 13. Relative variation of leakage current
versus junction temperature
0
1
2
3
4
5
6
25 50 75 100 125
dV/dt [T
j
] / dV/dt [T
j
= 125 °C]
V
D
=V
R
= 536 V
T
j
(°C)
25 50 75 100 125
V
DRM
=V
RRM
= 800V
V
DRM
=V
RRM
= 600 V
V
DRM
=V
RRM
= 200 V
I
DRM
/I
RRM
[T
j
;V
DRM
/V
RRM
] / I
DRM
/I
RRM
[T
j
= 125 °C; 800 V]
1.0E-03
1.0E-02
1.0E-01
1.0E+00
T
j
(°C)
Different blocking voltages
Figure 14. Relative variation of the clamping
voltage (V
CL
) versus junction temperature
(minimum values)
Figure 15. Thermal resistance junction to
ambient versus copper surface under tab
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125
V[T
j
] / V [T
j
= 25 °C]
CL CL
T
j
(°C)
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30 35 40
Rth(j-a)(°C/W)
DPAK
S
CU
(cm²)
Printed circuit board FR4,
copper thickness = 35 µm
Application information ACST4
6/14 DocID8766 Rev 7
2 Application information
2.1 Typical application description
The ACST4 device has been designed to control medium power load, such as AC motors in
home appliances. Thanks to its thermal and turn off commutation performances, the ACST4
switch is able to drive an inductive load up to 4 A with no turn off additional snubber. It also
provides high thermal performances in static and transient modes such as the compressor
inrush current or high torque operating conditions of an AC motor. Thanks to its low gate
triggering current level, the ACST4 can be driven directly by an MCU through a simple gate
resistor as shown Figure 16 and Figure 17.
Figure 16. Compressor control – typical diagrams
Compressor
Electronic
starter
Electronic
thermostat
ACST
Rg
ACST
Power supply
AC Mains
Gate
Driver
logical circuitry
1
2
3
PTC
Compressor with integrated e-starter
P1-P3P4-P6P7-P9P10-P12P13-P14

ACST435-8FP

Mfr. #:
Buy ACST435-8FP
Manufacturer:
STMicroelectronics
Description:
Triacs Overvoltage Triac Low <10mA 1500 rms
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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