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PUSB3FA1Z

P1-P3P4-P6P7-P9P10-P12P13-P14
PUSB3FA1
ESD protection for ultra high-speed interfaces
12 March 2018 Product data sheet
1. General description
The device is designed to protect high-speed interfaces such as SuperSpeed USB 3.1 at 10 Gbps,
High-Definition Multimedia Interface (HDMI), DisplayPort, external Serial Advanced Technology
Attachment (eSATA) and Low Voltage Differential Signaling (LVDS) interfaces against ElectroStatic
Discharge (ESD).
The device includes four high-level ESD protection diode structures. They protect sensitive
transmitters and receivers for ultra high-speed signal lines. The device is encapsulated in a
leadless small DFN2510A-10 (SOT1176-1) plastic package.
All signal lines are protected by a special diode configuration offering ultra low line capacitance
of only 0.29 pF. These diodes utilize a snap-back structure in order to provide protection to
downstream components from ESD voltages up to ±15 kV contact exceeding IEC 61000-4-2,
level 4.
2. Features and benefits
• System-level ESD protection for USB 2.0 and SuperSpeed USB 3.2 at 10 Gbps, HDMI,
DisplayPort, eSATA and LVDS
• Line capacitance of only 0.29 pF for each channel
• Outstanding system protection: extremely deep snap-back combined with dynamic resistance
of only 0.27 Ω.
• All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of
±15 kV exceeding IEC 61000-4-2, level 4
• Matched 0.5 mm trace spacing
• Signal lines with ≤ 0.05 pF matching capacitance between signal pairs
• Design-friendly ‘pass-through’ signal routing
3. Applications
The device is designed for high-speed receiver and transmitter port protection:
• Smartphones, tablet computers, Mobile Internet Devices (MID) and portable devices
• TVs and monitors
• DVD recorders and players
• Notebooks, main board graphic cards and ports
• Set-top boxes and game consoles
Nexperia
PUSB3FA1
ESD protection for ultra high-speed interfaces
4. Pinning information
Table 1. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 CH1 channel 1 ESD protection
2 CH2 channel 2 ESD protection
3 GND ground
4 CH3 channel 3 ESD protection
5 CH4 channel 4 ESD protection
6 n.c. not connected
7 n.c. no connection
8 GND ground
9 n.c. not connected
10 n.c. not connected
Transparent top view
10 9 8 7 6
1 2 3 4 5
DFN2510A-10 (SOT1176-1)
CH1
CH2
CH3
CH4
GND
=
aaa-016329
5. Ordering information
Table 2. Ordering information
PackageType number
Name Description Version
PUSB3FA1 DFN2510A-10 plastic, extremely thin small outline package; 10 terminals; 0.5
mm pitch; 2.5 mm x 1 mm x 0.5 mm body
SOT1176-1
6. Marking
Table 3. Marking codes
Type number Marking code
PUSB3FA1 FR
PUSB3FA1 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 12 March 2018 2 / 14
Nexperia
PUSB3FA1
ESD protection for ultra high-speed interfaces
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
I
input voltage -0.5 1.5 V
I
PPM
rated peak pulse current t
p
= 8/20 µs [1] - 7 A
IEC 61000-4-2, level 4; contact discharge [2] -15 15 kVV
ESD
electrostatic discharge
voltage
IEC 61000-4-2, level 4; air discharge [2] -15 15 kV
T
stg
storage temperature -55 125 °C
T
amb
ambient temperature -40 85 °C
[1] In positive and negative direction.
[2] All pins to ground.
8. Characteristics
Table 5. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
BR
breakdown voltage I
I
= 1 mA; T
amb
= 25 °C 5.5 9 - V
I
LR
reverse leakage
current
per channel; V
I
= 1.5 V; T
amb
= 25 °C - 1 100 nA
V
F
forward voltage I
I
= 1 mA; T
amb
= 25 °C - 0.7 - V
C
line
line capacitance f = 1 MHz; V
I
= 1.5 V; T
amb
= 25 °C [1] - 0.29 0.34 pF
ΔC
line
line capacitance
difference
f = 1 MHz; V
I
= 1.5 V; T
amb
= 25 °C [1] - 0.02 0.05 pF
TLP; positive transient; T
amb
= 25 °C [2] - 0.27 - Ωr
dyn
dynamic resistance
TLP; negative transient; ; T
amb
= 25 °C [2] - 0.27 - Ω
V
sbck
snapback voltage I
I
= 1 A; TLP 100/10 ns; T
amb
= 25 °C - 1.5 - V
I
PP
= 5 A; positive transient;
T
amb
= 25 °C
[3] - 3 - VV
CL
clamping voltage
I
PP
= -5 A; negative transient;
T
amb
= 25 °C
[3] - -3 - V
[1] The parameter is guaranteed by design.
[2] 100 ns Transmission Line Pulse (TLP), 50 Ω, pulser at 80 ns.
[3] According to IEC 61000-4-5 (8/20 µs current waveform).
PUSB3FA1 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 12 March 2018 3 / 14
P1-P3P4-P6P7-P9P10-P12P13-P14

PUSB3FA1Z

Mfr. #:
Buy PUSB3FA1Z
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors PUSB3FA1 XSON10
Lifecycle:
New from this manufacturer.
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