CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 200 V
V
RMS
24 31 35 42 63 70 105 140 V
V
DC
35 45 50 60 90 100 150 200 V
I
F(AV)
A
I
RRM
A
dV/dt V/μs
R
θJC
O
C/W
T
J
O
C
T
STG
O
C
Document Number: DS_D1308050 Version: L13
MBR1035 thru MBR10200
Taiwan Semiconductor
Schottk
Barrier Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-220AC
MECHANICAL DATA
Case: TO-220AC
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
MBR
1035
MBR
1045
MBR
1050
MBR
1060
MBR
1090
MBR
10100
MBR
10150
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
A
Peak repetitive reverse surge current (Note 1) 1.0
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
I
FRM
A
Maximum instantaneous forward voltage (Note 2)
I
F
=10A, T
J
=25℃
I
F
=10A, T
J
=125℃
V
F
V0.70 0.80 0.85
0.57
Typical thermal resistance
Operating junction temperature range - 55 to +150
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃
I
R
mA
15 10
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
MBR
10200
10
20
150
0.5
Voltage rate of change (Rated V
R
)
- 55 to +175
1.05
-
0.1
6
3
10000
0.70 0.71
