APTGT200A60T3AG Datasheet APTGT200A60T3AG | P1-P3

APTGT200A60T3AG

APTGT200A60T3AG – Rev 2 October, 2012

www.microsemi.com

1

–

6

29 1330 31 32

R1

2322

28

25

2726

7

8

3

4

1816 2019 14

16

15

182023 22

13

11

12

14

87

29

30

28 27 26

3

32

31

10

19

2

25

4

Pins 29/30/31/32 must be shorted together

Pins 26/27/28/22/23/25 must be shorted together

to achieve a phase leg

Pins 16/18/19/20 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 600 V

T

C

= 25°C

290

I

C

Continuous Collector Current

T

C

= 100°C

200

I

CM

Pulsed Collector Current T

C

= 25°C 400

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

750 W

RBSOA Reverse Bias Safe Operating Area T

j

= 150°C 400A @ 550V

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Very low stray inductance

 Kelvin emitter for easy drive

 Internal thermistor for temperature monitoring

 High level of integration

 AlN substrate for improved thermal performance

Benefits

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 RoHS Compliant

Phase leg

Trench + Field Stop IGBT3

Power Module

V

CES

= 600V

I

C

= 200A @ Tc = 100°C

APTGT200A60T3AG

APTGT200A60T3AG – Rev 2 October, 2012

www.microsemi.com

2

–

6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 600V 250 µA

T

j

= 25°C

1.5 1.9

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

=15V

I

C

= 200A

T

j

= 150°C

1.7

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 2 mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 12.3

C

oes

Output Capacitance 0.8

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

0.4

nF

Q

G

Gate charge

V

GE

= ±15V ; V

CE

=300V

I

C

=200A

2.2 µC

T

d(on)

Turn-on Delay Time 115

T

r

Rise Time 45

T

d(off)

Turn-off Delay Time 225

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 200A

R

G

= 2

55

ns

T

d(on)

Turn-on Delay Time 130

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 300

T

f

Fall Time

Inductive Switching (150°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 200A

R

G

= 2

70

ns

T

j

= 25°C 1

E

on

Turn on Energy

T

j

= 150°C 1.8

mJ

T

j

= 25°C 5.7

E

off

Turn off Energy

V

GE

= ±15V

V

Bus

= 300V

I

C

= 200A

R

G

= 2

T

j

= 150°C 7

mJ

I

sc

Short Circuit data

V

GE

≤15V ; V

Bus

= 360V

t

p

≤ 6µs ; T

j

= 150°C

1000 A

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

600 V

T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current V

R

=600V

T

j

= 150°C 500

µA

I

F

DC Forward Current

Tc = 80°C 200 A

T

j

= 25°C 1.6 2

V

F

Diode Forward Voltage

I

F

= 200A

V

GE

= 0V

T

j

= 150°C 1.5

V

T

j

= 25°C 125

t

rr

Reverse Recovery Time

T

j

= 150°C 220

ns

T

j

= 25°C 9

Q

rr

Reverse Recovery Charge

T

j

= 150°C 20

µC

T

j

= 25°C 2.2

Er Reverse Recovery Energy

I

F

= 200A

V

R

= 300V

di/dt =2800A/µs

T

j

= 150°C 4.8

mJ

APTGT200A60T3AG

APTGT200A60T3AG – Rev 2 October, 2012

www.microsemi.com

3

–

6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.20

R

thJC

Junction to Case Thermal Resistance

Diode

0.31

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 175

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 110 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%





























TT

B

R

T

11

exp

25

85/25

25

SP3 Package outline (dimensions in mm)

See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGT200A60T3AG

APTGT200A60T3AG

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