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MPSA28

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1 Publication Order Number:
MPSA28/D
MPSA28, MPSA29
MPSA29 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage MPSA28
MPSA29
V
CES
80
100
Vdc
Collector−Base Voltage MPSA28
MPSA29
V
CBO
80
100
Vdc
Emitter−Base Voltage V
EBO
12 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MPSA29 TO−92 5,000 Units/Box
MPSA29G TO−92
(Pb−Free)
5,000 Units/Box
MPSA28RLRP TO−92 2,000/Ammo Pack
MPSA28RLRPG TO−92
(Pb−Free)
2,000/Ammo Pack
Device Package Shipping
MPSA28 TO−92 5,000 Units/Box
MPSA28G TO−92
(Pb−Free)
5,000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
MPSA29RLRP TO−92 2,000/Ammo Pack
MPSA29RLRPG TO−92
(Pb−Free)
2,000/Ammo Pack
ORDERING INFORMATION
COLLECTOR 3
BASE
2
EMITTER 1
MPSA2x = Device Code
x = 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
TO−92
CASE 29−11
STYLE 1
1
2
3
MARKING
DIAGRAM
MPS
A2x
AYWW G
G
MPSA28, MPSA29
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 100 mAdc, V
BE
= 0) MPSA28
MPSA29
V
(BR)CES
80
100
−
−
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0) MPSA28
MPSA29
V
(BR)CBO
80
100
−
−
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
12 − − Vdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0) MPSA28
(V
CB
= 80 Vdc, I
E
= 0) MPSA29
I
CBO
−
−
−
−
100
100
nAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE
= 0) MPSA28
(V
CE
= 80 Vdc, V
BE
= 0) MPSA29
I
CES
−
−
−
−
500
500
nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
I
EBO
− − 100 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
h
FE
10,000
10,000
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.01 mAdc)
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
V
CE(sat)
−
−
0.7
0.8
1.2
1.5
Vdc
Base−Emitter On Voltage
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
− 1.4 2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
fT 125 200 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Cobo − 5.0 8.0 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. f
T
= h
fe
S f
test
.
MPSA28, MPSA29
http://onsemi.com
3
Figure 1. DC Current Gain Figure 2. “ON” Voltages
Figure 3. Temperature Coefficients Figure 4. Collector Saturation Region
Figure 5. Active Region − Safe Operating Area Figure 6. High Frequency Current Gain
100 1 k1.0
I
C
, COLLECTOR CURRENT (mA)
200
100
20
50
10
I
C
, COLLECTOR CURRENT (mA)
100 1 k1.0
1.4
1.0
0.8
0.6
100 5001.0
I
C
, COLLECTOR CURRENT (mA)
0
−1.0
−2.0
−3.0
−4.0
−5.0
I
B
, BASE CURRENT (mA)
1.00.2
2.4
2.0
1.6
1.2
0.8
0.4
2.0200
2.0 101.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1 k
200
100
50
20
10
I
C
, COLLECTOR CURRENT (mA)
1.0 1000.3
10
5.0
2.0
1.0
0.2
0.1
105.0
V
CE
= 5.0 V
h
FE
, DC CURRENT GAIN (k)
V, VOLTAGE (VOLTS)
qV, TEMPERATURE COEFFICIENT (mV/ C)
V
CE
, COLLECTOR VOLTAGE (VOLTS)
5.0
2.0
1.0
102.0 5.0 20 50 200 500
T
A
= 125°C
T
A
= 25°C
T
A
= −55°C
200 5002.0 5.0 10 20 50
1.2
1.6
1.8
T
A
= 25°C
V
BE(S)
@ I
C
/I
B
= 1.0 k
V
CE(S)
@ I
C
/I
B
= 1.0 k
V
BE(ON)
@ V
CE
= 5.0 V
°
2.0 5.0 10 20 50 10 20 100 200 1 k 1.5 k
T
A
= 25°C
, COLLECTOR CURRENT (mA)I
C
20 10050
500
0.5 2.0 5.0 200 30020 50
0.5
h
fe
, HIGH FREQUENCY CURRENT GAIN
V
CE
= 5.0 V
T
A
= 25°C
f = 100 MHz
I
C
= 10 mA
I
C
= 100 mA
I
C
= 250 mA
I
C
= 500 mA
1.0 ms
1.0 s
T
A
= 25°C
MPSA28
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSA29
100 ms
T
C
= 25°C
25°C to 125°C
25°C to 125°C
−55°C to 25°C
−55°C to 25°C
qVC for V
CE(S)
qVB for V
BE
VALID FOR DUTY CYCLE v 10%
P1-P3P4-P4

MPSA28

Mfr. #:
Buy MPSA28
Manufacturer:
Central Semiconductor
Description:
Darlington Transistors NPN Darlington
Lifecycle:
New from this manufacturer.
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