© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 0
1 Publication Order Number:
NTMFS4925NE/D
NTMFS4925NE
Power MOSFET
30 V, 48 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
• Optimized for 5 V, 12 V Gate Drives
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
16.7
A
T
A
= 100°C 10.5
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.70 W
Continuous Drain
Current R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C
I
D
25.2
A
T
A
= 100°C 15.9
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C P
D
6.16 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
9.7
A
T
A
= 100°C 6.2
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.92 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
48
A
T
C
=100°C 30
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
23.2 W
Pulsed Drain
Current
T
A
= 25°C, t
p
= 10 ms
I
DM
195 A
Current Limited by Package T
A
= 25°C I
Dmax
100 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
21 A
Drain to Source DV/DT dV/d
t
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 26 A
pk
, L = 0.1 mH, R
G
= 25 W)
E
AS
34 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
4925NE
AYWWG
G
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
6.0 mW @ 10 V
48 A
10 mW @ 4.5 V
N−CHANNEL MOSFET
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4925NET1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4925NET3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G (4)
S (1,2,3)
D (5,6)