VS-10CTQ150STRL-M3

VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Jul-14
1
Document Number: 95729
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 5 A
FEATURES
175 °C T
J
operation
Center tap configuration
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Designed and qualified according to JEDEC
®
-JESD47
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
2 x 5 A
V
R
150 V
V
F
at I
F
0.93 V
I
RM
7 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
5 mJ
TO-263AB (D
2
PAK) TO-262AA
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
VS-10CTQ150S-M3 VS-10CTQ150-1-M3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 10 A
V
RRM
150 V
I
FSM
t
p
= 5 μs sine 620 A
V
F
5 A
pk
, T
J
= 125 °C (per leg) 0.73 V
T
J
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-10CTQ150S-M3
VS-10CTQ150-1-M3
UNITS
Maximum DC reverse voltage V
R
150 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current, see fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 155 °C, rectangular waveform
5
A
per device 10
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
620
A
10 ms sine or 6 ms rect. pulse 115
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH 5 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1A
VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Jul-14
2
Document Number: 95729
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
5 A
T
J
= 25 °C
0.93
V
10 A 1.10
5 A
T
J
= 125 °C
0.73
10 A 0.86
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.05
mA
T
J
= 125 °C 7
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.468 V
Forward slope resistance r
t
28 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
3.50
°C/W
Maximum thermal resistance,
junction to case per package
1.75
Typical thermal resistance,
case to heatsink (only for TO-220)
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style D
2
PAK 10CTQ150S
Case style TO-262 10CTQ150-1
100
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0 2.50.5 1.0 1.5 2.0 3.0
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.0001
0.001
0.01
0.1
1
0 25 50 75 100 125 150
10
100
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Jul-14
3
Document Number: 95729
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
1000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
40 140
80 120 16020 60
100
T
J
= 25 °C
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
120
130
140
150
160
170
180
02468
DC
See note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0123456 8
0
1
2
4
7
3
5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC

VS-10CTQ150STRL-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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