www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
2
IRGP4690DPbF/IRGP4690D-EPbF
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 10μH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
Collector-to-Emitter Breakdown Voltage 600 — — V V
= 0V, I
= 100μA
V
/
T
Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C V
= 0V, I
= 2.0mA (25°C-175°C)
—1.702.10 I
= 75A, V
= 15V, T
= 25°C
V
Collector-to-Emitter Saturation Voltage — 2.0 — V I
= 75A, V
= 15V, T
= 150°C
—2.1— I
= 75A, V
= 15V, T
= 175°C
V
Gate Threshold Voltage 4.0 — 6.5 V V
= V
, I
= 2.1mA
V
/
T
Threshold Voltage temp. coefficient — -21 — mV/°C V
= V
, I
= 2.1mA (25°C - 175°C)
gfe Forward Transconductance — 50 — S V
= 50V, I
= 75A, PW = 60μs
I
Collector-to-Emitter Leakage Current — 1.0 100 μAV
= 0V, V
= 600V
— 1040 — V
= 0V, V
= 600V, T
= 175°C
V
Diode Forward Voltage Drop — 2.23 3.0 V I
= 75A
—1.8— I
= 75A, T
= 175°C
I
Gate-to-Emitter Leakage Current — — ±200 nA V
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
Total Gate Charge — 150 — I
= 75A
Q
Gate-to-Emitter Charge — 40 — nC V
= 15V
Q
Gate-to-Collector Charge — 60 — V
= 400V
E
Turn-On Switching Loss — 2465 —
E
Turn-Off Switching Loss — 2155 — μJI
= 75A, V
= 400V, V
= 15V
E
Total Switching Loss — 4620 — R
= 10Ω, L = 200μH, T
= 25°C
t
Turn-On delay time — 50 — Energy losses include tail & diode
t
Rise time — 70 — ns
reverse recovery
t
Turn-Off delay time — 200 —
t
Fall time — 60 —
E
Turn-On Switching Loss — 3870 —
E
Turn-Off Switching Loss — 2815 — μJI
= 75A, V
= 400V, V
=15V
E
Total Switching Loss — 6685 — R
=10
, L=200μH,T
= 175°C
t
Turn-On delay time — 50 — Energy losses include tail & diode
t
Rise time — 70 — ns
reverse recovery
t
Turn-Off delay time — 240 —
t
Fall time — 70 —
C
Input Capacitance — 4440 — pF V
= 0V
C
Output Capacitance — 245 — V
= 30V
C
Reverse Transfer Capacitance — 130 — f = 1.0Mhz
T
= 175°C, I
= 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
= 480V, Vp
600V
Rg = 10
, V
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsV
= 400V, Vp
600V
Rg = 10
, V
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 470 — μJT
= 175°C
t
Diode Reverse Recovery Time — 155 — ns V
= 400V, I
= 75A
I
Peak Reverse Recovery Current — 27 — A V
= 15V, Rg = 10
, L =60μH
