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MBR2H200SFT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2017
January, 2017 − Rev. 1
1 Publication Order Number:
MBR2H200SF/D
MBR2H200SF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123FL Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• Epoxy Meets UL 94 V−0
• Package Designed for Optimal Automated Board Assembly
• These are Pb−Free Devices
Mechanical Characteristics
• Reel Options: MBR2H200SFT3G = 10,000 per 13 in reel/8 mm tape
• Device Marking: L2J
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MARKING DIAGRAM
L2J = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
www.onsemi.com
SOD−123FL
CASE 498
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
200 VOLTS
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR2H200SFT1G SOD−123
(Pb−Free)
3000 / Tape &
Reel
L2JMG
G
MBR2H200SFT3G SOD−123
(Pb−Free)
10000 / Tape &
Reel
MBR2H200SF
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 V
Average Rectified Forward Current
(T
L
= 108°C)
I
O
2.0 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 105°C)
I
FRM
4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
30 A
Storage and Operating Junction Temperature Range (Note 1) T
stg
, T
J
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
23 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
85 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
R
q
JA
330 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
V
F
0.86
0.94
0.71
0.78
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
200
2
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
MBR2H200SF
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.61.41.00.80.60.40.20
0.1
1
10
1.81.61.00.80.60.40.20
0.1
1
10
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
1801401201008040200
1.E−11
1801601201006040200
Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Diode
V
R
, REVERSE VOLTAGE (V) T
L
, LEAD TEMPERATURE (°C)
100101
1
10
100
140120100806040200
0
0.5
1.0
1.5
2.0
3.0
3.5
4.0
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1.2 1.8 2.0
T
L
= −55°C
T
L
= 25°C
T
L
= 125°C
T
L
= 150°C
1.2 1.4 2.0
T
L
= −55°C
T
L
= 25°C
T
L
= 125°C
T
L
= 150°C
T
L
= −55°C
T
L
= 25°C
T
L
= 125°C
T
L
= 150°C
60 160 200
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
T
L
= −55°C
T
L
= 25°C
T
L
= 125°C
T
L
= 150°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
80 140 200
T
L
= 25°C
2.5
R
q
JL
= 23°C/W
Square Wave
DC
1.E−02
1.E−01
P1-P3P4-P5

MBR2H200SFT1G

Mfr. #:
Buy MBR2H200SFT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers REC SOD123 2A 200V
Lifecycle:
New from this manufacturer.
Delivery:
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