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MPSA63RLRMG

P1-P3P4-P4
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© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 2
1 Publication Order Number:
MPSA62/D
MPSA62, MPSA63, MPSA64
MPSA64 is a Preferred Device
Darlington Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MPSA62
MPSA63/64
V
CES
−20
−30
Vdc
Collector−Base Voltage
MPSA62
MPSA63/64
V
CBO
−20
−30
Vdc
Emitter−Base Voltage V
EBO
−10 Vdc
Collector Current − Continuous I
C
−500 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
x = 2, 3, or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location
)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
MPS
A6x
AYWWG
G
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
TO−92
(TO−226AA)
CASE 29−11
STYLE 1
COLLECTOR 3
BASE
2
EMITTER 1
MPSA62, MPSA63, MPSA64
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −100 mAdc, V
BE
= 0) MPSA62
MPSA63, MPSA64
V
(BR)CES
−20
−30
−
−
Vdc
Collector Cutoff Current
(V
CB
= −15 Vdc, I
E
= 0) MPSA62
(V
CB
= −30 Vdc, I
E
= 0) MPSA63, MPSA64
I
CBO
−
−
−100
−100
nAdc
Emitter Cutoff Current
(V
EB
= −10 Vdc, I
C
= 0)
I
EBO
− −100 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc) MPSA63
MPSA64
MPSA62
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc) MPSA63
MPSA64
h
FE
5,000
10,000
20,000
10,000
20,000
−
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.01 mAdc) MPSA62
(I
C
= −100 mAdc, I
B
= −0.1 mAdc) MPSA63, MPSA64
V
CE(sat)
−
−
−1.0
−1.5
Vdc
Base−Emitter On Voltage
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc) MPSA62
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc) MPSA63, MPSA64
V
BE(on)
−
−
−1.4
−2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product (Note 2)
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc, f = 100 MHz) MPSA63, MPSA64
f
T
125 − MHz
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2. f
T
= |h
fe
| S f
test
.
ORDERING INFORMATION
Device Package Shipping
†
MPSA62 TO−92 5000 Units / Bulk
MPSA63 TO−92 5000 Units / Bulk
MPSA63G TO−92
(Pb−Free)
5000 Units / Bulk
MPSA63RLRA TO−92 2000 / Tape & Reel
MPSA63RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA63RLRM TO−92 2000 / Ammo Pack
MPSA63RLRMG TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA63RLRP TO−92 2000 / Ammo Pack
MPSA63RLRPG TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA63ZL1 TO−92 2000 / Ammo Pack
MPSA63ZL1G TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA64 TO−92 5000 Units / Bulk
MPSA64G TO−92
(Pb−Free)
5000 Units / Bulk
MPSA64RLRA TO−92 2000 / Tape & Reel
MPSA64RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA64RLRM TO−92 2000 / Ammo Pack
MPSA64RLRMG TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MPSA62, MPSA63, MPSA64
http://onsemi.com
3
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
200
−1.0
2.0
h
FE
, DC CURRENT GAIN (X1.0 K)
T
A
= 125°C
25°C
−55°C
V
CE
= −2.0 V
−2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −100 −300
100
70
50
30
20
10
7.0
5.0
3.0
−0.3 −0.5 −0.7 −70 −200
−5.0 V
−10 V
I
C
, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
V, VOLTAGE (VOLTS)
−2.0
0
−0.3
T
A
= 25°C
V
BE(on)
@ V
CE
= −5.0 V
−1.6
−1.2
−0.8
−0.4
V
CE(sat)
@ I
C
/I
B
= 1000
I
C
/I
B
= 100
−0.5 −1.0 −2 −3 −5 −10 −20 −30 −50 −100 −200 −300
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLT
S
−2.0
−0.6
T
A
= 25°C
I
C
=
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.1−0.2 −1 −2 −5 −10 −20 −50 −100−200−500−0.5 −1K−2K −10K
−10 mA −50 mA −100 mA −175 mA −300 mA
10
4.0
3.0
2.0
0.1
Figure 4. High Frequency Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
CE
= −5.0 V
f = 100 MHz
T
A
= 25°C
|h
FE
|, HIGH FREQUENCY CURRENT GAIN
1.0
0.4
0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 −1K
V
CE
, COLLECTOR VOLTAGE (VOLTS)
−6.0
I
C
, COLLECTOR CURRENT (mA)
−10 −20
Figure 5. Active Region, Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−300
−200
−100
−50
−20
−10
−40 −60
100 ms
1.0 ms
T
A
= 25°C
−1000
(DUTY CYCLE ≤ 10%)
1.0 s
T
C
= 25°C
MPSA62
−1.0 −2.0 −4.0
MPSA63
V
BE(sat)
@ I
C
/I
B
= 100
−5K
P1-P3P4-P4

MPSA63RLRMG

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Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 500mA 30V PNP
Lifecycle:
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