IRFH7440PbF
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback July 7, 2015
2
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Current is limited to 85A by source bond technology.
Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.097mH
R
G
= 50Ω, I
AS
= 50A, V
GS
=10V.
I
SD
≤ 50A, di/dt ≤ 1126A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of
FR-4 material.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50Ω, I
AS
= 22A,
V
GS
=10V.
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
(Bottom)
Junction-to-Case
–––
1.2
R
JC
(Top)
Junction-to-Case
––– 31
R
JA
Junction-to-Ambient
––– 35
R
JA
(<10s)
Junction-to-Ambient
––– 22
°C/W
A
°C
121
See Fig. 14, 15, 22a, 22b
104
3.0
Max.
159
101
624
85
232
-55 to + 150
± 20
0.83
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– 0.031 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.8 2.4
m
Ω
––– 2.7 –––
m
Ω
V
GS(th )
Gate Threshold Voltage 2.2 ––– 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.6 –––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 50A
V
DS
= V
GS
, I
D
= 100μA
V
GS
= 20V
V
GS
= -20V
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 6.0V, I
D
= 25A
