SOT23 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 3 - JULY 1995 ✪
.
SERIES PAIR COMMON CATHODE COMMON ANODE
Device Type: BAS70-04 Device Type: BAS70-05 Device Type: BAS70-06
Partmarking Detail: 2Z Partmarking Detail: 2Z5 Partmarking Detail: 1Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltage V
BR
70 V
I
R
=10µA
Reverse Leakage Current I
R
200
nA
V
R
=50V
Forward Voltage V
F
410 mV I
F
=1mA
Forward Current I
F
15 mA V
F
=1V
Capacitance C
T
2.0 pF f=1MHz, V
R
=0
Effective Minority Lifetime
(1)
τ
100 ps f=54MHz, I
pk
= 20mA
(Krakauer Test Method)
(1) Sample Test
For typical characteristics graphs see ZC2800E datasheet.
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3
2
SOT23
BAS70-04
BAS70-05
BAS70-06
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