PDTA144V_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 3 September 2009 4 of 18
NXP Semiconductors
PDTA144V series
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
5. Limiting values
[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
6. Thermal characteristics
[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −15 V
V
I
input voltage
positive - +15 V
negative - −40 V
I
O
output current (DC) - −100 mA
I
CM
peak collector current - −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT416
[1]
- 150 mW
SOT346
[1]
- 250 mW
SOT883
[2][3]
- 250 mW
SOT54
[1]
- 500 mW
SOT23
[1]
- 250 mW
SOT323
[1]
- 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT416
[1]
- - 833 K/W
SOT346
[1]
- - 500 K/W
SOT883
[2][3]
- - 500 K/W
SOT54
[1]
- - 250 K/W
SOT23
[1]
- - 500 K/W
SOT323
[1]
- - 625 K/W
