MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Device Test Conditions Min Typ Max Unit
EMITTER
V
F
Input Forward Voltage
MOCD217M I
F
= 1 mA − 1.05 1.3 V
MOCD213M I
F
= 10 mA − 1.15 1.5 V
MOCD207M,
MOCD208M,
MOCD211M
I
F
= 30 mA − 1.25 1.5 V
I
R
Reverse Leakage Current All V
R
= 6 V − 0.001 100
mA
C
IN
Input Capacitance All − 18 − pF
DETECTOR
I
CEO
Collector−Emitter Dark Current All
V
CE
= 10 V, T
A
= 25°C − 1.0 50 nA
V
CE
= 10 V, T
A
= 100°C − 1.0 −
mA
BV
CEO
Collector−Emitter Breakdown
Voltage
MOCD211M,
MOCD213M,
MOCD217M
I
C
= 100 mA
30 100 − V
MOCD207M,
MOCD208M
I
C
= 100 mA
70 100 − V
BV
ECO
Emitter−Collector Breakdown
Voltage
All
I
E
= 100 mA
7 10 − V
C
CE
Collector−Emitter Capacitance All f = 1.0 MHz, V
CE
= 0 − 7 − pF
COUPLED
CTR
Collector−Output Current
MOCD207M I
F
= 10 mA, V
CE
= 5 V 100 − 200 %
MOCD208M I
F
= 10 mA, V
CE
= 5 V 40 − 125 %
MOCD211M I
F
= 10 mA, V
CE
= 5 V 20 − − %
MOCD213M I
F
= 10 mA, V
CE
= 5 V 100 − − %
MOCD217M I
F
= 1 mA, V
CE
= 5 V 100 − − %
V
CE(SAT)
Collector−Emitter Saturation
Voltage
MOCD207M,
MOCD208M,
MOCD211M,
MOCD213M
I
C
= 2 mA, I
F
= 10 mA − − 0.4 V
MOCD217M
I
C
= 100 mA, I
F
= 1 mA
− − 0.4 V
t
on
Turn−On Time All I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 W (Figure 7)
− 7.5 −
ms
t
off
Turn−Off Time All I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 W (Figure 7)
− 5.7 −
ms
t
r
Rise Time All I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 W (Figure 7)
− 3.2 −
ms
t
f
Fall Time All I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 W (Figure 7)
− 4.7 −
ms
ISOLATION
V
ISO
Input−Output Isolation Voltage All t = 1 Minute 2500 − − VAC
RMS
C
ISO
Isolation Capacitance All V
I−O
= 0 V, f = 1 MHz − 0.2 − pF
R
ISO
Isolation Resistance All V
I−O
= ±500 VDC, T
A
= 25°C 10
11
− −
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
