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NRVBS3100T3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2012
April, 2017 − Rev. 5
1 Publication Order Number:
MBRS3100T3/D
MBRS3100T3G,
NRVBS3100T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
Device
Package
Shipping
†
ORDERING INFORMATION
SMC 2−LEAD
CASE 403AC
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 100 VOLTS
www.onsemi.com
B310 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
MBRS3100T3G SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NRVBS3100T3G* SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
AYWW
B310G
G
** The Assembly Location code (A) is front side
optional. In cases where the Assembly Location i
s
stamped in the package, the front side assembly
code may be blank.
MBRS3100T3G, NRVBS3100T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 100°C)
I
F(AV)
3.0
A
Non−repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
130
A
Operating Junction Temperature Range (Note 1) T
J
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead
R
q
JL
11 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 3.0 A, T
J
= 25°C)
(i
F
= 6.0 A, T
J
= 25°C)
(i
F
= 3.0 A, T
J
= 125°C)
(i
F
= 6.0 A, T
J
= 125°C)
V
F
0.79
0.90
0.62
0.70
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
i
R
0.05
5.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MBRS3100T3G, NRVBS3100T3G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
0.40.3 0.50.2 0.9
10
0.1
1
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
0.4 0.6 0.70.5 1
10
0.1
1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
Figure 3. Typical Reverse Current
20 6004080
1E−07
1E−06
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance
125°C
25°C
1E−05
1E−04
1E−03
125°C
75°C
25°C
20 6004080
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
1000
25°C
1E−08
0.3
10
0.70.6 0.8
75°C
0.8 0.9
75°C
100 10
0
100
125°C
T
J
= 25°C
Figure 5. Current Derating − Lead
100 11090 180
7
0
3
I
F
, AVERAGE FORWARD
CURRENT (A)
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
13426
4.5
0
1
I
O
, AVERAGE FORWARD CURRENT (A)
P
fo
, AVERAGE POWER DISSIPATION
(W)
dc
0120 140
SQUARE WAVE
5
1
2
6
4
5
0.5
2
1.5
3
2.5
4
3.5
dc
SQUARE WAVE
RATED VOLTAGE APPLIED
R
q
JL
= 11 °C/W
T
J
= 150°C
130 150 160 170
P1-P3P4-P4

NRVBS3100T3G

Mfr. #:
Buy NRVBS3100T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers RECTFR 3A 100V SURFACE
Lifecycle:
New from this manufacturer.
Delivery:
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