©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
KSC900
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 50 mA
P
C
Collector Power Dissipation 250 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=10mA, I
B
=0 25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 5 V
I
CBO
Collector Cut-off Current V
CB
=25V, I
E
=0 50 nA
I
EBO
Emitter Cut-off Current V
EB
=3V, I
C
=0 100 nA
h
FE
DC Current Gain V
CE
=3V, I
C
=0.5mA 120 1000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=20mA, I
B
=2mA 0.1 0.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
=3V, I
C
=0.5mA 0.62 0.7 V
f
T
Current Gain Bandwidth Product V
CE
=3V, I
C
=1mA 100 MHz
NL Noise Level V
CC
=12V, I
C
=0.1mA
R
S
=25kΩ
A
V
=80dB, f=1KHz
30 50 mV
Classification Y G L V
h
FE
120 ~ 240 200 ~ 400 350 ~ 700 600 ~ 1000
KSC900
Low Frequency & Low Noise Amplifier
• Collector-Base Voltage : V
CBO
=30V
• Low Noise Level : NL=50mV (MAX)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
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