AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
0
1
2
3
4
5
0 2 4 6 8 10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0.1
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Z
θ
θ
θ
θ
JA
Normalized Transient
Thermal Resistance
V
DS
=-10V
I
D
=-3.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100
-V
DS
(Volts)
-I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1ms
R
DS(ON)
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd.
