OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-4EGU06-M3/5BT

P1-P3P4-P6
VS-4EGU06-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94774
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 4 A FRED Pt
®
FEATURES
• Ultrafast recovery time, reduced Q
rr
and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM, snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art ultrafast recovery rectifiers designed with
optimized performance of forward voltage drop, ultrafast
recovery time, and fast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
Note
(1)
Mounted on PCB with minimum pad size
PRODUCT SUMMARY
Package DO-214AA (SMB)
I
F(AV)
4 A
V
R
600 V
V
F
at I
F
0.94 V
t
rr
typ. 45 ns
T
J
max. 175 °C
Diode variation Single die
Cathode Anode
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600
V
Average rectified forward current I
F(AV)
T
L
= 103 °C
(1)
4
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 100 A
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 4 A - 1.12 1.3
I
F
= 4 A, T
J
= 150 °C - 0.94 1.15
Reverse leakage current I
R
V
R
= V
R
rated - - 3
μA
T
J
= 150 °C, V
R
= V
R
rated - - 100
Junction capacitance C
T
V
R
= 600 V - 6.8 - pF
VS-4EGU06-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
2
Document Number: 94774
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Mounted on PCB with minimum pad size
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 45 -
ns
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 50 -
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A - - 65
T
J
= 25 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-39-
T
J
= 125 °C - 61 -
Peak recovery current I
RRM
T
J
= 25 °C - 5.8 -
A
T
J
= 125 °C - 7.7 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 119 -
nC
T
J
= 125 °C - 251 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-55 - +175 °C
Thermal resistance,
junction to case
R
thJC
(1)
--18
°C/W
Thermal resistance,
junction to ambient
R
thJA
(1)
--90
Approximate Weight
0.1 g
0.003 oz.
Marking device Case style DO-214AA (SMB) 4U6
T
j
= 25 °C
T
j
= 150 °C
T
j
= 175 °C
V
FM
-
Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0.0 0.5 1.0 1.5 2.0 2.5
0.1
1
10
100
1
150 °C
175 °C
25 °C
125 °C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
0 100 200 300 400 500 600
0.0001
0.001
0.01
0.1
10
100
VS-4EGU06-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
3
Document Number: 94774
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 100 200 400 500300 600
1
100
10
Allowable Case Temperature (°C)
I
F(AV)
-
Average
Forward Current (A)
0123
45
6
60
40
80
100
120
140
160
180
200
DC
0 1 2 3 4 5 6
0
1
2
3
4
5
6
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RM
S Limit
Average Power Loss (W)
I
F(AV)
-
Average
Forward Current (A)
t
rr
(ns)
dI
F
/dt (A/μs)
20
100 1000
30
40
50
60
70
80
90
100
I
F
= 4 A, 125 °C
I
F
= 4 A, 25 °C
typical value
Q
rr
(nC)
dI
F
/dt (A/μs)
100 1000
typical value
50
100
150
200
250
300
350
400
I
F
= 4 A, 25 °C
I
F
= 4 A, 125 °C
P1-P3P4-P6

VS-4EGU06-M3/5BT

Mfr. #:
Buy VS-4EGU06-M3/5BT
Manufacturer:
Vishay
Description:
Rectifiers 4 Amp 600 Volts Ultrafast - Low VF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet