NTTFS5811NLTWG

NTTFS5811NL
www.onsemi.com
4
TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 10203040
Figure 7. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 3
0
Figure 8. Gate−to−Source Voltage vs. Total
Charge
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
V
DS
= 32 V
I
D
= 20 A
T
J
= 25°C
Q
T
Q
gs
Q
gd
1.0
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
DD
= 32 V
I
D
= 20 A
V
GS
= 4.5 V
t
d(off)
t
d(on)
t
f
t
r
0
10
20
30
40
50
60
0.5 0.6 0.7 0.8 0.9
1
.0
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
0.1
1
10
100
1000
0.1 1 10 100
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
10 ms
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0
10
20
30
40
50
60
25 50 75 100 125 150 1
75
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
E
AS
, SINGLE PULSE DRAIN−TO
SOURCE AVALANCHE ENERGY (mJ)
I
D
= 36 A
NTTFS5811NL
www.onsemi.com
5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100
0
Figure 13. Thermal Response
PULSE TIME (sec)
R
q
JA(t)
(
°
C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.01
Single Pulse
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTTFS5811NLTAG 5811 WDFN8
(Pb−Free)
1500 / Tape & Reel
NTTFS5811NLTWG 5811 WDFN8
(Pb−Free)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTTFS5811NL
www.onsemi.com
6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M 1.40 1.50
q 0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994
.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
B
A
0.20
C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A 0.70 0.75
A1 0.00 −−
b 0.23 0.30
c 0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e 0.65 BSC
G 0.30 0.41
K 0.65 0.80
L 0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05
C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75
2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40
0.009 0.012 0.016
E3
4X
NTTFS5811NL/D
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NTTFS5811NLTWG

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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors MOSFET Single N-CH 40V 53A
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New from this manufacturer.
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