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IXEL40N400

P1-P3P4-P5
© 2012 IXYS CORPORATION, All Rights Reserved
V
CES
= 4000V
I
C110
= 40A
V
CE(sat)
≤≤
≤≤
≤ 3.2V
IXEL40N400
DS99385B(09/12)
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 4000 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 90 A
I
C110
T
C
= 110°C 40 A
I
CM
Pulse Width Limited by T
JM
, 1ms, V
GE
= 25V 400 A
P
C
T
C
= 25°C 380 W
T
J
- 40 ... +150 °C
T
JM
150 °C
T
stg
- 40 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062 in.) from Case for 10s 260 °C
V
ISOL
I
ISOL
< 1mA, 50/60 Hz, t = 1 minute 4000 V~
F
C
Mounting Force 30..170 / 7..36 Nm/lb-in.
Weight 8g
Very High Voltage
IGBT
G = Gate C = Collector
E = Emitter
ISOPLUS i5-Pak
TM
G
C
E
Isolated Tab
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 10mA, V
CE
= V
GE
5.5 7.0 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 100 μA
Note 2, T
J
= 125°C 1.5 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±500 nA
V
CE(sat)
I
C
= I
C110
, V
GE
= 15V, Note 1 2.4 3.2 V
T
J
= 125°C 3.0 V
t
fi(typ)
= 425ns
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ Electrical Isolation
UL Recognized Package
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
High Power Density
Easy to Mount
Applications
Capacitor Discharge
Pulser Circuits
( Electrically Isolated Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXEL40N400
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= I
C110
, V
CE
= 10V, Note 1 14 24 S
I
SC
I
C
= I
C110
, V
CC
= 3400V, V
CM
< 4000V 200 A
V
GE
= 15V, t
SC
<
10μs
C
ies
6040 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 278 pF
C
res
120 pF
R
Gint
5.2 Ω
Q
g(on)
275 nC
Q
ge
I
C
= I
C110
, V
GE
= 15V, V
CE
= 1000 V 63 nC
Q
gc
134 nC
t
d(on)
160 ns
t
ri
100 ns
E
on
55 mJ
t
d(off)
630 ns
t
fi
425 ns
E
off
165 mJ
t
d(on)
155 ns
t
ri
105 ns
E
on
85 mJ
t
d(off)
715 ns
t
fi
455 ns
E
off
205 mJ
R
thJC
0.26 °C/W
R
thCK
(Pressure Mount) 0.15 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Inductive load, T
J
= 25°C
I
C
= I
C110
, V
GE
= 15V
V
CE
= 2800V, R
G
= 33Ω
Note 3
Inductive load, T
J
= 125°C
I
C
= I
C110
, V
GE
= 15V
V
CE
= 2800V, R
G
= 33Ω
Note 3
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp I
CES
measurement.
3. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
ISOPLUS i5-Pak
TM
HV Outline
Pin 1 = Gate
Pin 2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
SYM INCHES MILLIMETER
MIN MAX MIN MAX
A 0.190 0.205 4.83 5.21
A1 0.102 0.118 2.59 3.00
A2 0.046 0.055 1.17 1.40
b 0.045 0.055 1.14 1.40
b1 0.063 0.072 1.60 1.83
b2 0.058 0.068 1.47 1.73
c 0.020 0.029 0.51 0.74
D 1.020 1.040 25.91 26.42
E 0.770 0.799 19.56 20.29
e 0.150 BSC 3.81 BSC
e1 0.450 BSC 11.43 BSC
L 0.780 0.820 19.81 20.83
L1 0.080 0.102 2.03 2.59
Q 0.210 0.235 5.33 5.97
Q1 0.490 0.513 12.45 13.03
R 0.150 0.180 3.81 4.57
R1 0.100 0.130 2.54 3.30
S 0.668 0.690 16.97 17.53
T 0.801 0.821 20.34 20.85
U 0.065 0.080 1.65 2.03
e1
e1
31 2
c
A1
E
b3
S
b2
b1
e
4
+
© 2012 IXYS CORPORATION, All Rights Reserved
IXEL40N400
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
21V
19V
17V
15V
9V
11
V
13
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25
V
21
V
19V
11
V
15
V
13
V
9
V
17
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
CE
- Volts
I
C
- Amperes
11
V
9
V
13
V
7
V
V
GE
= 25V
21V
19V
17V
15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15
V
I
C
= 80
A
I
C
= 20
A
I
C
= 40
A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
9 1113151719212325
V
GE
- Volts
V
CE
- Volts
I
C
= 80
A
T
J
= 25ºC
40
A
20
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
5 6 7 8 9 10 11 12 13 14 15 16
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
125ºC
P1-P3P4-P5

IXEL40N400

Mfr. #:
Buy IXEL40N400
Manufacturer:
Littelfuse
Description:
IGBT Transistors 4000V 425ns IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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