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QS5U34TR

P1-P3P4-P5
QS5U34
Transistors
1/4
1.8V Drive
Nch+SBD
MOSFET
QS5U34
zStructure
Silicon N-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The QS5U34 combines Nch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (1.8V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
zApplications
Load switch, DC / DC conversion
zDimensions (Unit : mm)
Each lead has same dimensions
TSMT5
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
(1)
(3)(2)
(4)(5)
2.8
1.6
0.4
1.9
2.9
0.950.95
Abbreviated symbol : U34
zPackaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
QS5U34
TR
3000
Type
zEquivalent circuit
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗1 ESD protection diode
∗2 Body diode
∗2
∗1
(1) (2)
(5)
(3)
(4)
QS5U34
Transistors
2/4
zAbsolute maximum ratings (Ta=25°C)
V
RM
V
R
I
F
I
FSM
Tj
Parameter
V
V
DSS
Symbol
20
V
V
GSS
10
A
I
D
±1.5
A
I
DP
±3.0
A
I
S
0.6
A
I
SP
2.4
V20
A0.5
A2.0
°C
150
°C
Tch 150
V30
Limits Unit
Channel temperature
<Di>
<MOSFET>
W/ELEMENT
P
D
0.9
Power dissipation
W / TOTAL
P
D
1.25
°C
Tstg
−55 to +150
Total power dissipation
Range of Storage temperature
<MOSFET AND Di>
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Pulsed
Source current
(Body diode)
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
∗1
∗1
∗3
∗2
W/ELEMENT
P
D
0.7
Power dissipation
∗3
∗3
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
•
1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
I
GSS
Y
fs
Min.
−−10
µA
V
GS
=10V / V
DS
=0V
V
DD
10V
Typ. Max.
Unit
Conditions
V
(BR) DSS
20 −−
V
I
D
=1mA, / V
GS
=0V
I
DSS
−−1
µA
V
DS
=20V / V
GS
=0V
V
GS (th)
0.3 − 1.3
V
V
DS
=10V / I
D
=1mA
− 130 180 I
D
=1.5A, V
GS
=4.5V
R
DS (on)
− 170 240 mΩ
mΩ
mΩ
I
D
=1.5A, V
GS
=2.5V
− 220 310 I
D
=0.8A, V
GS
=1.8V
1.6 −−
S
V
DS
=10V, I
D
=1.5A
C
iss
− 110 −
pF
V
DS
=10V
C
oss
− 18
15
−
pF
V
GS
=0V
C
rss
−
5
−
pF
f=1MHz
t
d (on)
−
5
−
ns
t
r
−
20
−
ns
t
d (off)
−
3
−
ns
t
f
−
1.8
−
ns
Q
g
−
0.3
2.5
nC
Q
gs
−
0.3
−
nC
V
GS
=4.5V
Q
gd
−−
nC
I
D
=1.5A
∗Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
∗
V
DD
10V
I
D
=1.0A
V
GS
=4.5V
R
L
=10Ω
R
G
=10Ω
<MOSFET>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
<MOSFET>Body diode (source-drain)
V
SD
−−
1.2 V
I
S
=0.6A / V
GS
=0V
Forward voltage
IR −−100 µAV
R
=20V
Reverse current
VF
−−0.36 V I
F
=0.1A
−−0.47 V I
F
=0.5A
Forward voltage
<Di>
QS5U34
Transistors
3/4
zElectrical characteristic curves
<MOSFET>
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.01
10
100
1000
0.1 1 10 100
CAPACITANCE : C (pF)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
Coss
Crss
DRAIN CURRENT : I
D
(A)
0.01
1
10
100
1000
0.1 1 10
SWITCHING TIME : t (ns)
Fig.2 Switching Characteristics
Ta=25°C
V
DD
=10V
V
GS
=4.5V
R
G
=10Ω
Pulsed
tf
td(on)
tr
td(off)
TOTAL GATE CHARGE : Qg (nC)
0.0
0
1
2
3
4
5
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.3 Dynamic Input Characteristics
Ta=25°C
V
DD
=10V
I
D
=1.5A
R
G
=10Ω
Pulsed
GATE-SOURCE VOLTAGE : V
GS
(V)
0.001
0.0001
0.01
0.1
1
10
0.50.0 1.0 1.5 2.0
DRAIN CURRENT : I
D
(A)
Fig.4 Typical Transfer Characteristics
V
DS
=10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
GATE-SOURCE VOLTAGE : V
GS
(V)
01
0
300
250
200
150
100
50
350
400
450
500
23 10456789
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-source Voltage
Ta=25°C
Pulsed
I
D
=1.5A
I
D
=0.8A
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.0
0.01
0.1
1
10
0.5 1.0 1.5
SOURCE CURRENT : I
S
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
0.01
0.1
10
100
1000
110
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on) (mΩ)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
V
GS
=1.8V
Pulsed
Ta=125°C
−25°C
75°C
25°C
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
0.01
0.1
10
100
1000
110
V
GS
=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on) (mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
0.01
0.1
10
100
1000
110
V
GS
=4.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
P1-P3P4-P5

QS5U34TR

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Description:
MOSFET N Chan20V1.5A Load Switching
Lifecycle:
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