MJ15016G

2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
http://onsemi.com
4
Figure 6. Switching Times Test Circuit
(Circuit shown is for NPN)
+13 V
25 ms
0
-11 V
30 W
-5 V
1N6073
SCOPE
V
CC
+30 V
7.5 W
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
10
0.2
Figure 7. Turn−On Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
7
5
3
2
1
0.7
0.5
0.1
0.3 0.5 0.7 1 2 3 7 15
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
0.3
0.2
510
t
r
t
d
10
0.2
Figure 8. Turn−Off Times
I
C
, COLLECTOR CURRENT (AMPS)
7
5
3
2
0.1
0.5
0.1
0.3 0.5 0.7 1 3 5 15
V
CC
= 30
I
C
/I
B
= 10
I
B
1 = I
B
2
T
J
= 25°C
0.3
t, TIME (s)μ
t
f
t
s
2
0.7
0.2
710
400
1.0
Figure 9. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
20
20 50 100 200 500 10002.0 5.0 10
C, CAPACITANCE (pF)
200
100
50
30
T
J
= 25°C
C
ib
C
ob
2N3055A
MJ15015
MJ15016
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
http://onsemi.com
5
COLLECTOR CUT−OFF REGION
10,000
+0.2
Figure 10. 2N3055A, MJ15015
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
1000
100
10
1.0
, COLLECTOR CURRENT (A)
μ
I
C
0.1
0.01
+0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5
V
CE
= 30 V
T
J
= 150°C
100°C
25°C
REVERSE
FORWARD
I
C
= I
CES
NPN
1000
-0.2
Figure 11. MJ15016
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
100
10
1.0
0.1
, COLLECTOR CURRENT (A)μI
C
0.01
0.001
-0.1 0 +0.1 +0.2 +0.3
V
CE
= 30 V
T
J
= 150°C
100°C
25°C
REVERSE FORWARD
I
C
= I
CES
PNP
+0.4 +0.5
20
Figure 12. Forward Bias Safe Operating Area
2N3055A
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5
1
10 20 10060
2
I
C
, COLLECTOR CURRENT (AMPS)
dc
30 ms
1 ms
100 ms
100 ms
20
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
0.2
15 20 10060
2.0
I
C
, COLLECTOR CURRENT (AMP)
dc
0.1ms
100ms
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
1.0
0.5
30 120
1.0ms
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on T
C
= 25_C;
T
J(pk)
is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device Package Shipping
2N3055AG TO−204
(Pb−Free)
100 Units / Tray
MJ15015G TO−204
(Pb−Free)
100 Units / Tray
MJ15016G TO−204
(Pb−Free)
100 Units / Tray
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
A
N
E
C
K
−T−
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y
M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
U
L
G
B
V
H
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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MJ15016G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 15A 120V 180W PNP
Lifecycle:
New from this manufacturer.
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