MUN2140, MMUN2140L, MUN5140, DTA114TE, DTA144TM3, NSBA144TF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT1123) (NSBA144TF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead (Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
55 to +150 °C
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
CollectorEmitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
EmitterBase Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
0.2
mAdc
CollectorBase Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
120 250
CollectorEmitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 1.0 mA)
V
CE(sat)
0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
0.6 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 5.0 mA)
V
i(on)
4.0 2.6
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
V
OL
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
V
OH
4.9
Vdc
Input Resistor R1 32.9 47 61.1
kW
Resistor Ratio R
1
/R
2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
MUN2140, MMUN2140L, MUN5140, DTA114TE, DTA144TM3, NSBA144TF3
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5
TYPICAL CHARACTERISTICS
MUN2140, MMUN2140L, MUN5140, DTA144TE, DTA144TM3
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
10
100101
1
10
100
1000
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
1
2
3
4
6
10
2016 2812840
0.001
0.1
1
10
100
Figure 6. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
V
CE(sat)
, COLLECTOREMITTER
VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
150°C
55°C
25°C
V
CE
= 10 V
150°C
55°C
25°C
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
150°C
55°C
25°C
V
O
= 0.2 V
150°C
55°C
25°C
0.01
5
24
1
7
8
9
MUN2140, MMUN2140L, MUN5140, DTA114TE, DTA144TM3, NSBA144TF3
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PACKAGE DIMENSIONS
SC59
CASE 318D04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031
ǒ
mm
inches
Ǔ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b 0.35 0.43 0.50 0.014
c 0.09 0.14 0.18 0.003
D 2.70 2.90 3.10 0.106
E 1.30 1.50 1.70 0.051
e 1.70 1.90 2.10 0.067
L 0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
H
E

MUN5140T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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