APTGF350DU60G
APTGF350DU60G – Rev 3 October, 2012
www.microsemi.com
1-7
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
c
= 25°C
430
I
C
Continuous Collector Current
T
c
= 80°C
350
I
CM
Pulsed Collector Current T
c
= 25°C 1225
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation
T
c
= 25°C
1562 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 800A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q2
E
Q1
C1 C2
E2
G2
E1
G1
V
CES
= 600V
I
C
= 350A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Dual common source
PT IGBT Power Module