BDW42G (NPN), BDW46G, BDW47G (PNP)
www.onsemi.com
4
ACTIVE−REGION SAFE OPERATING AREA
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ T
C
= 25°C (SINGLE PULSE)
50
1.0
Figure 5. BDW42
20
2.0
0.05
10 20 100
T
J
= 25°C
BDW42
1.0 ms
0.1 ms
0.2
5.0
0.5
I
C
, COLLECTOR CURRENT (AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
30 70
1.0
0.1
0.5 ms
dc
2.0 503.0 5.0 7.0
Figure 6. BDW46 and BDW47
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ T
C
= 25°C (SINGLE PULSE)
50
1.0
20
2.0
0.05
10 20 100
T
J
= 25°C
BDW46
BDW47
1.0 ms
0.1 ms
0.2
5.0
0.5
I
C
, COLLECTOR CURRENT (AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
30 70
1.0
0.1
0.5 ms
dc
2.0 503.0 5.0 7.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
T
J(pk)
= 200°C; T
C
is variable depending on conditions.
Second breakdown pulse limits are valid for duty cycles to
10% provided T
J(pk)
≤ 200°C. T
J(pk)
may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
10,000
1.0
Figure 7. Small−Signal Current Gain
f, FREQUENCY (kHz)
10
2.0 5.0 10 20 50 100 200 1000
500
300
100
5000
h
FE
, SMALL-SIGNAL CURRENT GAIN
20
3000
200
500
2000
1000
30
50
BDW46, 47 (PNP)
BDW42 (NPN)
T
J
= 25°C
V
CE
= 3.0 V
I
C
= 3.0 A
300
0.1
Figure 8. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
30
1.0 2.0 5.0 20 10010
C, CAPACITANCE (pF)
200
100
70
50
T
J
= + 25°C
C
ib
C
ob
500.2 0.5
BDW46, 47 (PNP)
BDW42 (NPN)
