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BDW46

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 17
Publication Order Number:
BDW42/D
BDW42G (NPN),
BDW46G,BDW47G (PNP)
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
• High DC Current Gain − h
FE
= 2500 (typ) @ I
C
= 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
= 80 Vdc (min) − BDW46
100 Vdc (min) − BDW42/BDW47
• Low Collector Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (max) @ I
C
= 5.0 Adc
3.0 Vdc (max) @ I
C
= 10.0 Adc
• Monolithic Construction with Built−In Base Emitter Shunt resistors
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BDW46
BDW42, BDW47
V
CEO
80
100
Vdc
Collector-Base Voltage
BDW46
BDW42, BDW47
V
CB
80
100
Vdc
Emitter-Base Voltage V
EB
5.0 Vdc
Collector Current I
C
15 Adc
Base Current I
B
0.5 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
85
0.68
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
q
JC
1.47 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLT, 85 WATT
www.onsemi.com
1
2
3
4
Device Package Shipping
ORDERING INFORMATION
BDW47G 50 Units/RailTO−220
(Pb−Free)
BDWxx = Device Code
x = 42, 46, or 47
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
BDW42G TO−220
(Pb−Free)
50 Units/Rail
BDW46G TO−220
(Pb−Free)
50 Units/Rail
BDWxx
AYWWG
BDW42G (NPN), BDW46G, BDW47G (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0) BDW46
BDW42/BDW47
V
CEO(sus)
80
100
−
−
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0) BDW46
(V
CE
= 50 Vdc, I
B
= 0) BDW42/BDW47
I
CEO
−
−
2.0
2.0
mAdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0) BDW46
(V
CB
= 100 Vdc, I
E
= 0) BDW42/BDW47
I
CBO
−
−
1.0
1.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 2.0 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
1000
250
−
−
Collector−Emitter Saturation Voltage
(I
C
= 5.0 Adc, I
B
= 10 mAdc)
(I
C
= 10 Adc, I
B
= 50 mAdc)
V
CE(sat)
−
−
2.0
3.0
Vdc
Base−Emitter On Voltage
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
− 3.0 Vdc
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42 V
CE
= 28.4 Vdc
V
CE
= 40 Vdc
BDW46/BDW47 V
CE
= 22.5 Vdc
V
CE
= 36 Vdc
I
S/b
3.0
1.2
3.8
1.2
−
−
−
−
Adc
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
f
T
4.0 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) BDW42
BDW46/BDW47
C
ob
−
−
200
300
pF
Small−Signal Current Gain
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
h
fe
300 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
BDW42G (NPN), BDW46G, BDW47G (PNP)
www.onsemi.com
3
90
60
40
20
0
25 50 75 100 125 150
Figure 1. Power Temperature Derating Curve
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
80
70
50
30
10
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
3.0
0.7
0.5
0.3
0.2
0.05
0.2 0.3 0.7 3.0 10
t
d
@ V
BE(off)
= 0 V
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t
f
0.07
1.0 5.0
t
s
t
r
0.1
1.0
2.0
0.5 2.0 7.0
0
V
CC
- 30 V
SCOPE
TUT
+ 4.0 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
D
1
MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE I
B
[ 100 mA
MSD6100 USED BELOW I
B
[ 100 mA
25 ms
D
1
51
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
2
APPROX
+ 8.0 V
V
1
APPROX
- 12 V
[ 8.0 k [ 150
for t
d
and t
r
, D
1
id disconnected
and V
2
= 0
For NPN test circuit reverse all polarities
R
B
BDW46, 47 (PNP)
BDW42 (NPN)
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.03 0.3 3.0 30 300
P1-P3P4-P6P7-P7

BDW46

Mfr. #:
Buy BDW46
Manufacturer:
ON Semiconductor
Description:
TRANS PNP DARL 80V 15A TO-220AB
Lifecycle:
New from this manufacturer.
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