Nexperia
PMV65UNEA
20 V, N-channel Trench MOSFET
PMV65UNEA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
= 25 °C - 20 V
V
GS
gate-source voltage T
j
= 25 °C; T
amb
= 25 °C -8 8 V
V
GS
= 4.5 V; T
amb
= 25 °C [1] - 2.8 AI
D
drain current
V
GS
= 4.5 V; T
amb
= 100 °C [1] - 1.8 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 11 A
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
T
j(init)
= 25 °C; I
D
= 0.3 A; DUT in
avalanche (unclamped)
- 5.6 mJ
[2] - 490 mWT
amb
= 25 °C
[1] - 940 mW
P
tot
total power dissipation
T
sp
= 25 °C - 6.25 W
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 0.9 A
ESD Maximum rating
V
ESD
electrostatic discharge
voltage
HBM - 2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
