LT5572
3
5572f
V
CC
= 5V, EN = High, T
A
= 25°C, f
LO
= 2GHz, f
RF
= 2002MHz, P
LO
= 0dBm.
BBPI, BBMI, BBPQ, BBMQ inputs 0.5V
DC
, baseband input frequency = 2MHz, I and Q 90° shifted (upper sideband selection).
P
RF(OUT)
= –10dBm, unless otherwise noted. (Note 3)
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
LO Input (LO)
f
LO
LO Frequency Range 1.5 to 2.5 GHz
P
LO
LO Input Power –10 0 5 dBm
S
11(ON)
LO Input Return Loss EN = High, P
LO
= 0dBm (Note 6) –15 dB
S
11(OFF)
LO Input Return Loss EN = Low (Note 6) –5.3 dB
NF
LO
LO Input Referred Noise Figure at 2GHz (Note 5) 14.5 dB
G
LO
LO to RF Small-Signal Gain at 2GHz (Note 5) 25 dB
IIP3
LO
LO Input 3rd Order Intercept at 2GHz (Note 5) –0.5 dBm
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
BW
BB
Baseband Bandwidth –3dB Bandwidth 460 MHz
V
CMBB
DC Common Mode Voltage Externally Applied (Note 4) 0.5 0.6 V
R
IN
Differential Input Resistance 90 kΩ
I
DC(IN)
Baseband Static Input Current (Note 4) –20 µA
P
LOBB
Carrier Feedthrough to BB P
OUT
= 0 (Note 4) –39 dBm
IP1dB Input 1dB Compression Point Differential Peak-to-Peak (Notes 7, 18) 2.8 V
P-P(DIFF)
ΔG
I/Q
I/Q Absolute Gain Imbalance 0.07 dB
Δϕ
I/Q
I/Q Absolute Phase Imbalance 0.9 Deg
Power Supply (V
CC
)
V
CC
Supply Voltage 4.5 5 5.25 V
I
CC(ON)
Supply Current EN = High 120 145 mA
I
CC(OFF)
Supply Current, Sleep Mode EN = 0V 50 µA
t
ON
Turn-On Time EN = Low to High (Note 11) 0.25 µs
t
OFF
Turn-Off Time EN = High to Low (Note 12) 1.3 µs
Enable (EN), Low = Off, High = On
Enable Input High Voltage EN = High 1 V
Input High Current EN = 5V 230 µA
Sleep Input Low Voltage EN = Low 0.5 V
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifi cations over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 3: Tests are performed as shown in the confi guration of Figure 7.
Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: V
BBPI
– V
BBMI
= 1V
DC
, V
BBPQ
– V
BBMQ
= 1V
DC
.
Note 6: Maximum value within –1dB bandwidth.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
Note 9: At 20MHz offset from the CW signal frequency.
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of fi nal value.
Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +
2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feedthrough nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal
at f = 3 • LO – BB versus the conversion gain of the desired signal at
f = LO + BB for BB = 2MHz and LO = 2GHz.
Note 18: The input voltage corresponding to the output P1dB.
